Optically pumped InGaN/GaN double heterostructure lasers with cleaved facets

D. Stocker; E. F. Schubert; K. S. Boutros; J. S. Flynn; R. P. Vaudo; V. M. Phanse; J. M. Redwing

doi:10.1049/el:19980323

Optically pumped InGaN/GaN double heterostructure lasers with cleaved facets

D. Stocker, E. F. Schubert, K. S. Boutros, J. S. Flynn, R. P. Vaudo, V. M. Phanse, J. M. Redwing

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Abstract

Optically pumped laser action is demonstrated in an InGaN/GaN double heterostructure with a 1000Å thick InGaN active region. Hydride vapour phase epitaxy (HVPE) is used to grow a 10μm thick GaN buffer layer on (0001) sapphire, and the GaN/In_0.09Ga_0.91N/GaN double heterostructure is subsequently grown by metal organic vapour phase epitaxy (MOVPE). 1 mm long cavities are produced by cleaving the structure along the (1010) plane of the sapphire substrate. Optical pumping at room temperature with a pulsed nitrogen laser yields an incident threshold power density of 1.3MW/cm². Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5meV, and the output becomes highly TE polarised.

Original language	English (US)
Pages (from-to)	373-375
Number of pages	3
Journal	Electronics Letters
Volume	34
Issue number	4
DOIs	https://doi.org/10.1049/el:19980323
State	Published - Feb 19 1998

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19980323

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title = "Optically pumped InGaN/GaN double heterostructure lasers with cleaved facets",

abstract = "Optically pumped laser action is demonstrated in an InGaN/GaN double heterostructure with a 1000{\AA} thick InGaN active region. Hydride vapour phase epitaxy (HVPE) is used to grow a 10μm thick GaN buffer layer on (0001) sapphire, and the GaN/In0.09Ga0.91N/GaN double heterostructure is subsequently grown by metal organic vapour phase epitaxy (MOVPE). 1 mm long cavities are produced by cleaving the structure along the (1010) plane of the sapphire substrate. Optical pumping at room temperature with a pulsed nitrogen laser yields an incident threshold power density of 1.3MW/cm2. Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5meV, and the output becomes highly TE polarised.",

author = "D. Stocker and Schubert, {E. F.} and Boutros, {K. S.} and Flynn, {J. S.} and Vaudo, {R. P.} and Phanse, {V. M.} and Redwing, {J. M.}",

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T1 - Optically pumped InGaN/GaN double heterostructure lasers with cleaved facets

AU - Stocker, D.

AU - Schubert, E. F.

AU - Boutros, K. S.

AU - Flynn, J. S.

AU - Vaudo, R. P.

AU - Phanse, V. M.

AU - Redwing, J. M.

PY - 1998/2/19

Y1 - 1998/2/19

N2 - Optically pumped laser action is demonstrated in an InGaN/GaN double heterostructure with a 1000Å thick InGaN active region. Hydride vapour phase epitaxy (HVPE) is used to grow a 10μm thick GaN buffer layer on (0001) sapphire, and the GaN/In0.09Ga0.91N/GaN double heterostructure is subsequently grown by metal organic vapour phase epitaxy (MOVPE). 1 mm long cavities are produced by cleaving the structure along the (1010) plane of the sapphire substrate. Optical pumping at room temperature with a pulsed nitrogen laser yields an incident threshold power density of 1.3MW/cm2. Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5meV, and the output becomes highly TE polarised.

AB - Optically pumped laser action is demonstrated in an InGaN/GaN double heterostructure with a 1000Å thick InGaN active region. Hydride vapour phase epitaxy (HVPE) is used to grow a 10μm thick GaN buffer layer on (0001) sapphire, and the GaN/In0.09Ga0.91N/GaN double heterostructure is subsequently grown by metal organic vapour phase epitaxy (MOVPE). 1 mm long cavities are produced by cleaving the structure along the (1010) plane of the sapphire substrate. Optical pumping at room temperature with a pulsed nitrogen laser yields an incident threshold power density of 1.3MW/cm2. Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5meV, and the output becomes highly TE polarised.

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EP - 375

JO - Electronics Letters

JF - Electronics Letters

IS - 4

ER -

Optically pumped InGaN/GaN double heterostructure lasers with cleaved facets

Abstract

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