Optically pumped InGaN/GaN double heterostructure lasers with cleaved facets

D. Stocker, E. F. Schubert, K. S. Boutros, J. S. Flynn, R. P. Vaudo, V. M. Phanse, J. M. Redwing

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


Optically pumped laser action is demonstrated in an InGaN/GaN double heterostructure with a 1000Å thick InGaN active region. Hydride vapour phase epitaxy (HVPE) is used to grow a 10μm thick GaN buffer layer on (0001) sapphire, and the GaN/In0.09Ga0.91N/GaN double heterostructure is subsequently grown by metal organic vapour phase epitaxy (MOVPE). 1 mm long cavities are produced by cleaving the structure along the (1010) plane of the sapphire substrate. Optical pumping at room temperature with a pulsed nitrogen laser yields an incident threshold power density of 1.3MW/cm2. Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5meV, and the output becomes highly TE polarised.

Original languageEnglish (US)
Pages (from-to)373-375
Number of pages3
JournalElectronics Letters
Issue number4
StatePublished - Feb 19 1998

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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