Optimal operation of GaN thin film epitaxy employing control vector parametrization

Keyphrases

• GaN Thin Film 100%
• Thin Film Epitaxy 100%
• Optimal Operation 100%
• Reactor 66%
• Spatial Discretization 66%
• Order Reduction 66%
• Deposited Film 66%
• Substrate Surface 33%
• Lower Order 33%
• Nonlinear Partial Differential Equations 33%
• Optimization Problem 33%
• Finite Difference 33%
• Spatiotemporal 33%
• Concentration Profile 33%
• Partial Differential Equations 33%
• Empirical Eigenfunctions 33%
• KarhunenLove Expansion 33%
• Dominant Dynamics 33%
• Parabolic Partial Differential Equations 33%
• Weighted Residual Method 33%
• Precursor Concentration 33%
• Eigenfunctions 33%
• Computational Resources 33%
• Nonlinear Model Order Reduction 33%
• Temporal Concentration 33%
• Model Order Reduction 33%
• Spatially Distributed Processes 33%
• Programming Techniques 33%
• Nonlinear Programming 33%
• Finite Element Technique 33%
• Spatiotemporal Behavior 33%
• Dominant Mode 33%
• Spatial Uniformity 33%
• Temporal Discretization 33%
• Dynamic Constraints 33%
• Thickness Uniformity 33%
• Vapor Phase Epitaxy 33%
• Constrained Optimization Problem 33%
• Optimal Operating 33%
• Order Optimization 33%

Chemical Engineering

• Epitaxial Growth 100%
• Vapor Phase Epitaxy 25%

Engineering

• Eigenfunction 33%