@inproceedings{dfa0a5d8fec14a9a956b91efbb2cddc4,
title = "Optimization of a 193-nm silylation process for sub-0.25-um lithography",
abstract = "We have optimized a positive-tone silylation process using polyvinylphenol resist and dimethylsilyldimethylamine as the silylating agent. Imaging quality and process latitude have been evaluated at 193 nm using a 0.5-NA SVGL prototype exposure system. A low-temperature dry etch process was developed that produces vertical resist profiles resulting in large exposure and defocus latitudes, linearity of gratings down to 0.175 μm, and resolution of 0.15-μm gratings and isolated lines.",
author = "Palmateer, {Susan C.} and Kunz, {Roderick R.} and Horn, {Mark W.} and Forte, {A. R.} and Mordechai Rothschild",
year = "1995",
month = jan,
day = "1",
language = "English (US)",
isbn = "0819417866",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Society of Photo-Optical Instrumentation Engineers",
pages = "455--464",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "Advances in Resist Technology and Processing XII ; Conference date: 20-02-1995 Through 22-02-1995",
}