Optimization of Al₂O₃/SiN_x stacked antireflection structures for N-type surface-passivated crystalline silicon solar cells

In the case of N-type solar cells, the anti-reflection property, as one of the important factors to further improve the energy-conversion efficiency, has been optimized using a stacked Al₂O₃/SiN_x layer. The effect of SiN_x layer thickness on the surface reflection property was systematically studied in terms of both experimental and theoretical measurement. In the stacked Al₂O₃/SiN _x layers, results demonstrated that the surface reflection property can be effectively optimized by adding a SiN_x layer, leading to the improvement in the final photovoltaic characteristic of the N-type solar cells.