Optimizing direct magnetoelectric coupling in Pb(Zr,Ti)O3/Ni multiferroic film heterostructures

Ming Feng; Jian Jun Wang; Jia Mian Hu; Jing Wang; Jing Ma; Hai Bo Li; Yang Shen; Yuan Hua Lin; Long Qing Chen; Ce Wen Nan

doi:10.1063/1.4913471

Optimizing direct magnetoelectric coupling in Pb(Zr,Ti)O₃/Ni multiferroic film heterostructures

Ming Feng, Jian Jun Wang, Jia Mian Hu, Jing Wang, Jing Ma, Hai Bo Li, Yang Shen, Yuan Hua Lin, Long Qing Chen, Ce Wen Nan

Research output: Contribution to journal › Article › peer-review

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Abstract

Polycrystalline Pt thin films of different thicknesses (0-75 nm) were introduced using magnetron sputtering in Pb(Zr_0.52Ti_0.48)O₃ (PZT, 400 nm in thickness)/Pt/Ni multiferroic film heterostructures, aimed at optimizing the transfer efficiency of magnetostrictive strain from the bottom Ni foil to the top PZT film and thus the direct magnetoelectric (ME) coupling. The ME voltage coefficient α_E31 was directly measured, while the strain transfer efficiency k was obtained by combined experimental and theoretical analysis. At the optimum Pt-thickness of 30 nm, the polycrystalline film heterostructure shows the largest α_E31 of 772 mV cm-1 Oe-1 at a low dc magnetic bias field of 86 Oe, as well as the highest k of 83% that is comparable to that in epitaxial quasi-2-2 film heterostructures.

Original language	English (US)
Article number	072901
Journal	Applied Physics Letters
Volume	106
Issue number	7
DOIs	https://doi.org/10.1063/1.4913471
State	Published - Feb 16 2015

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Optimizing direct magnetoelectric coupling in Pb(Zr,Ti)O3/Ni multiferroic film heterostructures",

abstract = "Polycrystalline Pt thin films of different thicknesses (0-75 nm) were introduced using magnetron sputtering in Pb(Zr0.52Ti0.48)O3 (PZT, 400 nm in thickness)/Pt/Ni multiferroic film heterostructures, aimed at optimizing the transfer efficiency of magnetostrictive strain from the bottom Ni foil to the top PZT film and thus the direct magnetoelectric (ME) coupling. The ME voltage coefficient αE31 was directly measured, while the strain transfer efficiency k was obtained by combined experimental and theoretical analysis. At the optimum Pt-thickness of 30 nm, the polycrystalline film heterostructure shows the largest αE31 of 772 mV cm-1 Oe-1 at a low dc magnetic bias field of 86 Oe, as well as the highest k of 83% that is comparable to that in epitaxial quasi-2-2 film heterostructures.",

author = "Ming Feng and Wang, {Jian Jun} and Hu, {Jia Mian} and Jing Wang and Jing Ma and Li, {Hai Bo} and Yang Shen and Lin, {Yuan Hua} and Chen, {Long Qing} and Nan, {Ce Wen}",

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doi = "10.1063/1.4913471",

language = "English (US)",

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T1 - Optimizing direct magnetoelectric coupling in Pb(Zr,Ti)O3/Ni multiferroic film heterostructures

AU - Feng, Ming

AU - Wang, Jian Jun

AU - Hu, Jia Mian

AU - Wang, Jing

AU - Ma, Jing

AU - Li, Hai Bo

AU - Shen, Yang

AU - Lin, Yuan Hua

AU - Chen, Long Qing

AU - Nan, Ce Wen

PY - 2015/2/16

Y1 - 2015/2/16

N2 - Polycrystalline Pt thin films of different thicknesses (0-75 nm) were introduced using magnetron sputtering in Pb(Zr0.52Ti0.48)O3 (PZT, 400 nm in thickness)/Pt/Ni multiferroic film heterostructures, aimed at optimizing the transfer efficiency of magnetostrictive strain from the bottom Ni foil to the top PZT film and thus the direct magnetoelectric (ME) coupling. The ME voltage coefficient αE31 was directly measured, while the strain transfer efficiency k was obtained by combined experimental and theoretical analysis. At the optimum Pt-thickness of 30 nm, the polycrystalline film heterostructure shows the largest αE31 of 772 mV cm-1 Oe-1 at a low dc magnetic bias field of 86 Oe, as well as the highest k of 83% that is comparable to that in epitaxial quasi-2-2 film heterostructures.

AB - Polycrystalline Pt thin films of different thicknesses (0-75 nm) were introduced using magnetron sputtering in Pb(Zr0.52Ti0.48)O3 (PZT, 400 nm in thickness)/Pt/Ni multiferroic film heterostructures, aimed at optimizing the transfer efficiency of magnetostrictive strain from the bottom Ni foil to the top PZT film and thus the direct magnetoelectric (ME) coupling. The ME voltage coefficient αE31 was directly measured, while the strain transfer efficiency k was obtained by combined experimental and theoretical analysis. At the optimum Pt-thickness of 30 nm, the polycrystalline film heterostructure shows the largest αE31 of 772 mV cm-1 Oe-1 at a low dc magnetic bias field of 86 Oe, as well as the highest k of 83% that is comparable to that in epitaxial quasi-2-2 film heterostructures.

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Optimizing direct magnetoelectric coupling in Pb(Zr,Ti)O₃/Ni multiferroic film heterostructures

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