TY - JOUR
T1 - Optimizing phase and microstructure of chemical solution-deposited bismuth ferrite (BiFeO3) thin films to reduce DC leakage
AU - Casper, Michelle D.
AU - Losego, Mark D.
AU - Maria, Jon Paul
N1 - Funding Information:
Acknowledgements Funding for this work was provided by the Department of Education (DOE) Graduate Assistantship in Areas of National Need (GAANN) Fellowship, the North Carolina State University Graduate School, and the National Science Foundation DMR grant 0547134. The authors are grateful for help with SEM by the Analytical Instrumentation Facility (AIF) at NCSU.
PY - 2013/2
Y1 - 2013/2
N2 - Polycrystalline bismuth ferrite (BiFeO3 or BFO) thin films were prepared by chemical solution deposition to explore the impact of processing conditions including annealing temperature, percent excess bismuth, and gel drying temperature on film microstructure and properties. Incorporating 0-5 % excess Bi and annealing at 550 C in air produced stoichiometric single-phase BiFeO3 films. Deviation from this temperature yielded the bismuth-rich Bi36Fe2O57 phase at temperatures below 550 C or the bismuth-deficient Bi2Fe4O9 phase at temperatures above 550 C, both of which contributed to higher DC leakage. However, even single-phase BiFeO3 films produced at 550 C show high DC leakage (~1.2 × 10-1 A/cm2 at 140 kV/cm) due to a porous microstructure. We have thus investigated unconventional thermal treatments that significantly increase film densification while maintaining phase purity. Under these revised thermal treatment conditions, room temperature leakage current values are reduced by three orders of magnitude to ~1.0 × 10-4 A/cm2 at 140 kV/cm.
AB - Polycrystalline bismuth ferrite (BiFeO3 or BFO) thin films were prepared by chemical solution deposition to explore the impact of processing conditions including annealing temperature, percent excess bismuth, and gel drying temperature on film microstructure and properties. Incorporating 0-5 % excess Bi and annealing at 550 C in air produced stoichiometric single-phase BiFeO3 films. Deviation from this temperature yielded the bismuth-rich Bi36Fe2O57 phase at temperatures below 550 C or the bismuth-deficient Bi2Fe4O9 phase at temperatures above 550 C, both of which contributed to higher DC leakage. However, even single-phase BiFeO3 films produced at 550 C show high DC leakage (~1.2 × 10-1 A/cm2 at 140 kV/cm) due to a porous microstructure. We have thus investigated unconventional thermal treatments that significantly increase film densification while maintaining phase purity. Under these revised thermal treatment conditions, room temperature leakage current values are reduced by three orders of magnitude to ~1.0 × 10-4 A/cm2 at 140 kV/cm.
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U2 - 10.1007/s10853-012-6914-0
DO - 10.1007/s10853-012-6914-0
M3 - Article
AN - SCOPUS:84871795373
SN - 0022-2461
VL - 48
SP - 1578
EP - 1584
JO - Journal of Materials Science
JF - Journal of Materials Science
IS - 4
ER -