Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells

Faiz Ahmad; Akhlesh Lakhtakia; Peter B. Monk

doi:10.1364/AO.381246

Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells

Faiz Ahmad, Akhlesh Lakhtakia, Peter B. Monk

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

An optoelectronic optimization was carried out for an Al_ξGa₁−_ξAs (AlGaAs) solar cell containing (i) an n-AlGaAs absorber layer with a graded bandgap and (ii) a periodically corrugated Ag backreflector combined with localized ohmic Pd–Ge–Au backcontacts. The bandgap of the absorber layer was varied either sinusoidally or linearly. An efficiency of 33.1% with the 2000-nm-thick n-AlGaAs absorber layer is predicted with linearly graded bandgap along with silver backreflector and localized ohmic backcontacts, in comparison to 27.4% efficiency obtained with homogeneous bandgap and a continuous ohmic backcontact. Sinusoidal grading of the bandgap is predicted to enhance the maximum efficiency to 34.5%. Thus, grading the bandgap of the absorber layer, along with a periodically corrugated Ag backreflector and localized ohmic Pd-Ge-Au backcontacts, can help realize ultrathin and high-efficient AlGaAs solar cells for terrestrial applications.

Original language	English (US)
Pages (from-to)	1018-1027
Number of pages	10
Journal	Applied optics
Volume	59
Issue number	4
DOIs	https://doi.org/10.1364/AO.381246
State	Published - Feb 1 2020

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Engineering (miscellaneous)
Electrical and Electronic Engineering

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10.1364/AO.381246

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title = "Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells",

abstract = "An optoelectronic optimization was carried out for an AlξGa1−ξAs (AlGaAs) solar cell containing (i) an n-AlGaAs absorber layer with a graded bandgap and (ii) a periodically corrugated Ag backreflector combined with localized ohmic Pd–Ge–Au backcontacts. The bandgap of the absorber layer was varied either sinusoidally or linearly. An efficiency of 33.1% with the 2000-nm-thick n-AlGaAs absorber layer is predicted with linearly graded bandgap along with silver backreflector and localized ohmic backcontacts, in comparison to 27.4% efficiency obtained with homogeneous bandgap and a continuous ohmic backcontact. Sinusoidal grading of the bandgap is predicted to enhance the maximum efficiency to 34.5%. Thus, grading the bandgap of the absorber layer, along with a periodically corrugated Ag backreflector and localized ohmic Pd-Ge-Au backcontacts, can help realize ultrathin and high-efficient AlGaAs solar cells for terrestrial applications.",

author = "Faiz Ahmad and Akhlesh Lakhtakia and Monk, {Peter B.}",

note = "Publisher Copyright: {\textcopyright} 2020 Optical Society of America.",

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AU - Ahmad, Faiz

AU - Lakhtakia, Akhlesh

AU - Monk, Peter B.

PY - 2020/2/1

Y1 - 2020/2/1

N2 - An optoelectronic optimization was carried out for an AlξGa1−ξAs (AlGaAs) solar cell containing (i) an n-AlGaAs absorber layer with a graded bandgap and (ii) a periodically corrugated Ag backreflector combined with localized ohmic Pd–Ge–Au backcontacts. The bandgap of the absorber layer was varied either sinusoidally or linearly. An efficiency of 33.1% with the 2000-nm-thick n-AlGaAs absorber layer is predicted with linearly graded bandgap along with silver backreflector and localized ohmic backcontacts, in comparison to 27.4% efficiency obtained with homogeneous bandgap and a continuous ohmic backcontact. Sinusoidal grading of the bandgap is predicted to enhance the maximum efficiency to 34.5%. Thus, grading the bandgap of the absorber layer, along with a periodically corrugated Ag backreflector and localized ohmic Pd-Ge-Au backcontacts, can help realize ultrathin and high-efficient AlGaAs solar cells for terrestrial applications.

AB - An optoelectronic optimization was carried out for an AlξGa1−ξAs (AlGaAs) solar cell containing (i) an n-AlGaAs absorber layer with a graded bandgap and (ii) a periodically corrugated Ag backreflector combined with localized ohmic Pd–Ge–Au backcontacts. The bandgap of the absorber layer was varied either sinusoidally or linearly. An efficiency of 33.1% with the 2000-nm-thick n-AlGaAs absorber layer is predicted with linearly graded bandgap along with silver backreflector and localized ohmic backcontacts, in comparison to 27.4% efficiency obtained with homogeneous bandgap and a continuous ohmic backcontact. Sinusoidal grading of the bandgap is predicted to enhance the maximum efficiency to 34.5%. Thus, grading the bandgap of the absorber layer, along with a periodically corrugated Ag backreflector and localized ohmic Pd-Ge-Au backcontacts, can help realize ultrathin and high-efficient AlGaAs solar cells for terrestrial applications.

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JO - Applied optics

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Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells

Abstract

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