TY - JOUR
T1 - Optoelectronic Properties of Heterostructures
T2 - The Most Recent Developments Based on Graphene and Transition-Metal Dichalcogenides
AU - Pradhan, Nihar R.
AU - Talapatra, Saikat
AU - Terrones, Mauricio
AU - Ajayan, Pulickel M.
AU - Balicas, Luis
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/6
Y1 - 2017/6
N2 - The extremely high chargecarrier mobility in graphene has motivated the exploration of unique properties in other two-dimensional (2-D) materials, such as hexagonal boron nitride (h-BN), phosphorene, silicine, and the transition-metal dichalcogenides (TMDs). The latter compounds have generated great interest due to their potential for optoelectronic applications, since their band gaps are tunable as a function of the number of layers, even as the compounds remain flexible and nearly translucent when composed of a few atomic layers.
AB - The extremely high chargecarrier mobility in graphene has motivated the exploration of unique properties in other two-dimensional (2-D) materials, such as hexagonal boron nitride (h-BN), phosphorene, silicine, and the transition-metal dichalcogenides (TMDs). The latter compounds have generated great interest due to their potential for optoelectronic applications, since their band gaps are tunable as a function of the number of layers, even as the compounds remain flexible and nearly translucent when composed of a few atomic layers.
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U2 - 10.1109/MNANO.2017.2676185
DO - 10.1109/MNANO.2017.2676185
M3 - Article
AN - SCOPUS:85017188345
SN - 1932-4510
VL - 11
SP - 18
EP - 32
JO - IEEE Nanotechnology Magazine
JF - IEEE Nanotechnology Magazine
IS - 2
M1 - 7891562
ER -