TY - GEN
T1 - Organic thin film transistors-electronics anywhere
AU - Jackson, Thomas Nelson
N1 - Publisher Copyright:
© 2001 ISDRS-Univ of Maryland.
PY - 2001
Y1 - 2001
N2 - Organic thin film transistor (OTFT) device performance now rivals or exceeds that of amorphous silicon devices, and low OTFT process temperatures allow fabrication on a range of surfaces including cloth, paper, or polymeric substrates. Potential applications for organic TFTs include pixel access devices in active matrix displays, and low cost electronics for smart cards or merchandise tags. OTFTs have been demonstrated using a variety of organic semiconductors, including both polymers and small molecule materials. To date, OTFTs fabricated using pentacene as the active layer material have shown the best performance. Pentacene OTFTs on rigid substrates have demonstrated carrier field-effect mobility greater than 3 cm2/V-s, subthreshold slope less than 0.4 V/decade, near-zero threshold voltage, and on/off current ratio larger than 108.
AB - Organic thin film transistor (OTFT) device performance now rivals or exceeds that of amorphous silicon devices, and low OTFT process temperatures allow fabrication on a range of surfaces including cloth, paper, or polymeric substrates. Potential applications for organic TFTs include pixel access devices in active matrix displays, and low cost electronics for smart cards or merchandise tags. OTFTs have been demonstrated using a variety of organic semiconductors, including both polymers and small molecule materials. To date, OTFTs fabricated using pentacene as the active layer material have shown the best performance. Pentacene OTFTs on rigid substrates have demonstrated carrier field-effect mobility greater than 3 cm2/V-s, subthreshold slope less than 0.4 V/decade, near-zero threshold voltage, and on/off current ratio larger than 108.
UR - https://www.scopus.com/pages/publications/84961857123
UR - https://www.scopus.com/pages/publications/84961857123#tab=citedBy
U2 - 10.1109/ISDRS.2001.984510
DO - 10.1109/ISDRS.2001.984510
M3 - Conference contribution
AN - SCOPUS:84961857123
T3 - 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
SP - 340
EP - 343
BT - 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Semiconductor Device Research Symposium, ISDRS 2001
Y2 - 5 December 2001 through 7 December 2001
ER -