Organic thin film transistors with field effect mobility >2 cm2/V-s

D. J. Gundlach; C. C. Kuo; S. F. Nelson; T. N. Jackson

Organic thin film transistors with field effect mobility >2 cm²/V-s

D. J. Gundlach, C. C. Kuo, S. F. Nelson, T. N. Jackson

Research output: Contribution to conference › Paper › peer-review

Abstract

Pentacene-based organic thin film transistors (OTFT) with field effect mobility as large as 2.1 cm²/V-s are reported. Using silane coupling agents to reduce the surface energy of the SiO₂ gate dielectric used in bottom gate pentacene OTFTs significantly improves device performance. The device was fabricated on a single crystal silicon substrate with the substrate serving as the gate electrode and 250 nm thick thermal SiO₂ layer grown for use as the OTFT gate dielectric.

Original language	English (US)
Pages	164-165
Number of pages	2
State	Published - 1999
Event	Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA Duration: Jun 28 1999 → Jun 30 1999

Other

Other	Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
City	Santa Barbara, CA, USA
Period	6/28/99 → 6/30/99

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "Organic thin film transistors with field effect mobility >2 cm2/V-s",

abstract = "Pentacene-based organic thin film transistors (OTFT) with field effect mobility as large as 2.1 cm2/V-s are reported. Using silane coupling agents to reduce the surface energy of the SiO2 gate dielectric used in bottom gate pentacene OTFTs significantly improves device performance. The device was fabricated on a single crystal silicon substrate with the substrate serving as the gate electrode and 250 nm thick thermal SiO2 layer grown for use as the OTFT gate dielectric.",

author = "Gundlach, \{D. J.\} and Kuo, \{C. C.\} and Nelson, \{S. F.\} and Jackson, \{T. N.\}",

year = "1999",

language = "English (US)",

pages = "164--165",

note = "Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) ; Conference date: 28-06-1999 Through 30-06-1999",

}

TY - CONF

T1 - Organic thin film transistors with field effect mobility >2 cm2/V-s

AU - Gundlach, D. J.

AU - Kuo, C. C.

AU - Nelson, S. F.

AU - Jackson, T. N.

PY - 1999

Y1 - 1999

N2 - Pentacene-based organic thin film transistors (OTFT) with field effect mobility as large as 2.1 cm2/V-s are reported. Using silane coupling agents to reduce the surface energy of the SiO2 gate dielectric used in bottom gate pentacene OTFTs significantly improves device performance. The device was fabricated on a single crystal silicon substrate with the substrate serving as the gate electrode and 250 nm thick thermal SiO2 layer grown for use as the OTFT gate dielectric.

AB - Pentacene-based organic thin film transistors (OTFT) with field effect mobility as large as 2.1 cm2/V-s are reported. Using silane coupling agents to reduce the surface energy of the SiO2 gate dielectric used in bottom gate pentacene OTFTs significantly improves device performance. The device was fabricated on a single crystal silicon substrate with the substrate serving as the gate electrode and 250 nm thick thermal SiO2 layer grown for use as the OTFT gate dielectric.

UR - https://www.scopus.com/pages/publications/0033362199

UR - https://www.scopus.com/inward/citedby.url?scp=0033362199&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0033362199

SP - 164

EP - 165

T2 - Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC)

Y2 - 28 June 1999 through 30 June 1999

ER -

Organic thin film transistors with field effect mobility >2 cm²/V-s

Abstract

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All Science Journal Classification (ASJC) codes

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