Orientation control of knbo3 thin films deposited by laser ablation on mgo (100) using srtio, transition layers

Venkatraman Gopalan; Huyang Xie; Wei Yung Hsu; Rishi Raj

doi:10.1080/00150199408017596

Orientation control of knbo3 thin films deposited by laser ablation on mgo (100) using srtio, transition layers

Venkatraman Gopalan
, Huyang Xie
, Wei Yung Hsu
, Rishi Raj

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Epitaxial thin films of KNbO3 were deposited on MgO (100) single crystal substrates using pulsed laser ablation, with a SrTiO3 transition layer in between. Their stoichiometry was controlled by repeated cycles of alternate pulsing of KNbO3 and KNO3 targets. The SrTiO3 transition layers were used to control the orientation of the KNbO3 film. Using two different deposition temperatures, SrTiO3 films were grown with two different growth planes, namely, (110) and (100). For (100) oriented SrTiO3 films, the orientation relationship between various layers was (110) or (001) KNbO3 // (100) SrTiO3 // (100) MgO. For (110) oriented SrTiO3 films, the orientation relationships were (020) or (200) KNbO3 // (110) SrTiO3 // (100) MgO. Measurement of the capacitance of the KNbO3 films during heating revealed a transition from the orthoihombic to tetragonal phase near 235±2 °C and tetragonal to cubic phase near 430±2 °C.

Original language	English (US)
Pages (from-to)	55-60
Number of pages	6
Journal	Ferroelectrics
Volume	152
Issue number	1
DOIs	https://doi.org/10.1080/00150199408017596
State	Published - Feb 1994

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1080/00150199408017596

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@article{bb918e28fb744d9dbdf3fd6eb57e93f6,

title = "Orientation control of knbo3 thin films deposited by laser ablation on mgo (100) using srtio, transition layers",

abstract = "Epitaxial thin films of KNbO3 were deposited on MgO (100) single crystal substrates using pulsed laser ablation, with a SrTiO3 transition layer in between. Their stoichiometry was controlled by repeated cycles of alternate pulsing of KNbO3 and KNO3 targets. The SrTiO3 transition layers were used to control the orientation of the KNbO3 film. Using two different deposition temperatures, SrTiO3 films were grown with two different growth planes, namely, (110) and (100). For (100) oriented SrTiO3 films, the orientation relationship between various layers was (110) or (001) KNbO3 // (100) SrTiO3 // (100) MgO. For (110) oriented SrTiO3 films, the orientation relationships were (020) or (200) KNbO3 // (110) SrTiO3 // (100) MgO. Measurement of the capacitance of the KNbO3 films during heating revealed a transition from the orthoihombic to tetragonal phase near 235±2 °C and tetragonal to cubic phase near 430±2 °C.",

author = "Venkatraman Gopalan and Huyang Xie and Hsu, \{Wei Yung\} and Rishi Raj",

note = "Funding Information: SrTiO, [001] (mismatch -1.8 \%). This is confirmed by TEM diffraction in Fig. 4(b). To summarize, epitaxial and stoichiometric thin films of KNbO, were deposited on single crystal MgO substrates using a SrTiO, transition layer by pulsed laser ablation. The measured fernelectric transition temperatures for KNbO, were close to the values reported for bulk single crystals. A (100) oriented SrTiO, transition layer results in (1 10) or (001) orientations of KNbO, overlayer film,w hile a (11 0) oriented SrTiO, transition layer results in (200) or (020) orientations of KNbO, films. These films are well aligned both in-plane and perpendicular to the substrate as confirmed by four circle X-ray diffractometer and transrm* ss ion electron microscopy. This research was supported by the National Science Foundation under Grant No: DDM-9148983 and through the Materials Science Center at Comell University National Nanofabrication Facility. Assistance from Anil Pannikkat and Glen Swan is gratefully acknowledged. High density targets were obtained from Jupiter Technology, Inc., Ithaca, NY.",

year = "1994",

month = feb,

doi = "10.1080/00150199408017596",

language = "English (US)",

volume = "152",

pages = "55--60",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

number = "1",

}

TY - JOUR

T1 - Orientation control of knbo3 thin films deposited by laser ablation on mgo (100) using srtio, transition layers

AU - Gopalan, Venkatraman

AU - Xie, Huyang

AU - Hsu, Wei Yung

AU - Raj, Rishi

N1 - Funding Information: SrTiO, [001] (mismatch -1.8 %). This is confirmed by TEM diffraction in Fig. 4(b). To summarize, epitaxial and stoichiometric thin films of KNbO, were deposited on single crystal MgO substrates using a SrTiO, transition layer by pulsed laser ablation. The measured fernelectric transition temperatures for KNbO, were close to the values reported for bulk single crystals. A (100) oriented SrTiO, transition layer results in (1 10) or (001) orientations of KNbO, overlayer film,w hile a (11 0) oriented SrTiO, transition layer results in (200) or (020) orientations of KNbO, films. These films are well aligned both in-plane and perpendicular to the substrate as confirmed by four circle X-ray diffractometer and transrm* ss ion electron microscopy. This research was supported by the National Science Foundation under Grant No: DDM-9148983 and through the Materials Science Center at Comell University National Nanofabrication Facility. Assistance from Anil Pannikkat and Glen Swan is gratefully acknowledged. High density targets were obtained from Jupiter Technology, Inc., Ithaca, NY.

PY - 1994/2

Y1 - 1994/2

N2 - Epitaxial thin films of KNbO3 were deposited on MgO (100) single crystal substrates using pulsed laser ablation, with a SrTiO3 transition layer in between. Their stoichiometry was controlled by repeated cycles of alternate pulsing of KNbO3 and KNO3 targets. The SrTiO3 transition layers were used to control the orientation of the KNbO3 film. Using two different deposition temperatures, SrTiO3 films were grown with two different growth planes, namely, (110) and (100). For (100) oriented SrTiO3 films, the orientation relationship between various layers was (110) or (001) KNbO3 // (100) SrTiO3 // (100) MgO. For (110) oriented SrTiO3 films, the orientation relationships were (020) or (200) KNbO3 // (110) SrTiO3 // (100) MgO. Measurement of the capacitance of the KNbO3 films during heating revealed a transition from the orthoihombic to tetragonal phase near 235±2 °C and tetragonal to cubic phase near 430±2 °C.

AB - Epitaxial thin films of KNbO3 were deposited on MgO (100) single crystal substrates using pulsed laser ablation, with a SrTiO3 transition layer in between. Their stoichiometry was controlled by repeated cycles of alternate pulsing of KNbO3 and KNO3 targets. The SrTiO3 transition layers were used to control the orientation of the KNbO3 film. Using two different deposition temperatures, SrTiO3 films were grown with two different growth planes, namely, (110) and (100). For (100) oriented SrTiO3 films, the orientation relationship between various layers was (110) or (001) KNbO3 // (100) SrTiO3 // (100) MgO. For (110) oriented SrTiO3 films, the orientation relationships were (020) or (200) KNbO3 // (110) SrTiO3 // (100) MgO. Measurement of the capacitance of the KNbO3 films during heating revealed a transition from the orthoihombic to tetragonal phase near 235±2 °C and tetragonal to cubic phase near 430±2 °C.

UR - https://www.scopus.com/pages/publications/0028096433

UR - https://www.scopus.com/pages/publications/0028096433#tab=citedBy

U2 - 10.1080/00150199408017596

DO - 10.1080/00150199408017596

M3 - Article

AN - SCOPUS:0028096433

SN - 0015-0193

VL - 152

SP - 55

EP - 60

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1

ER -

Orientation control of knbo3 thin films deposited by laser ablation on mgo (100) using srtio, transition layers

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