Orientation dependence of nickel silicide formation in contacts to silicon nanowires

N. S. Dellas, B. Z. Liu, S. M. Eichfeld, C. M. Eichfeld, T. S. Mayer, S. E. Mohney

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The orientation dependence of Ni silicide phase formation in the silicidation of silicon nanowires (SiNWs) by Ni has been studied. SiNWs with a [112] growth direction contacted by Ni pads form θ -Ni2 Si for annealing conditions from 350 to 700 °C for 2 min. The θ -Ni2 Si has an epitaxial orientation of θ -Ni2 Si [001] Si [11 1-] and θ -Ni2 Si (100) Si (112) with the SiNW. On the other hand, SiNWs with a [111] growth direction react with Ni pads to form NiSi2 with an epitaxial orientation of NiSi2 [1 1- 0] Si [1 1- 0] and NiSi2 (111) Si (111) after annealing at 450 °C for 2 min. The [111] SiNWs were also silicided at 700 °C for 2 min, forming the low-resistivity NiSi phase. The epitaxial phases identified in the reactions of Ni films with SiNWs suggest that lattice matching at both the silicide/Si growth front and the surface of the original SiNW may play a significant role in determining the first silicide segment to grow.

Original languageEnglish (US)
Article number094309
JournalJournal of Applied Physics
Issue number9
StatePublished - 2009

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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