TY - JOUR
T1 - Orientation domain dispersions in wafer scale epitaxial monolayer WSe2 on sapphire
AU - Chen, Xuegang
AU - Huet, Benjamin
AU - Choudhury, Tanushree H.
AU - Redwing, Joan M.
AU - Lu, Toh Ming
AU - Wang, Gwo Ching
N1 - Publisher Copyright:
© 2021
PY - 2021/11/30
Y1 - 2021/11/30
N2 - Monolayer WSe2, a 2D transition metal dichalcogenide (TMDCs), has been demonstrated as a good candidate for potential applications in optoelectronics. It is imperative to know the crystalline quality of WSe2 over the wafer scale prior to its applications. Azimuthal reflection high-energy electron diffraction (ARHEED) is demonstrated to be a powerful technique to measure the symmetry, lattice constants, and in-plane orientation domain dispersion in wafer-scale, continuous monolayer WSe2 epitaxially grown by metal organic chemical vapor deposition on c-plane sapphire substrate. The constructed 2D reciprocal map from ARHEED reveals few degrees’ dispersion in WSe2 orientation domains due to the step meandering/bunching/mosaic of sapphire substrate. Minor 30° orientation domains are also observed. The methodology can be applied to study other TMDCs epitaxial monolayers, graphene, and confined atomically thin hetero-epitaxial metals.
AB - Monolayer WSe2, a 2D transition metal dichalcogenide (TMDCs), has been demonstrated as a good candidate for potential applications in optoelectronics. It is imperative to know the crystalline quality of WSe2 over the wafer scale prior to its applications. Azimuthal reflection high-energy electron diffraction (ARHEED) is demonstrated to be a powerful technique to measure the symmetry, lattice constants, and in-plane orientation domain dispersion in wafer-scale, continuous monolayer WSe2 epitaxially grown by metal organic chemical vapor deposition on c-plane sapphire substrate. The constructed 2D reciprocal map from ARHEED reveals few degrees’ dispersion in WSe2 orientation domains due to the step meandering/bunching/mosaic of sapphire substrate. Minor 30° orientation domains are also observed. The methodology can be applied to study other TMDCs epitaxial monolayers, graphene, and confined atomically thin hetero-epitaxial metals.
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U2 - 10.1016/j.apsusc.2021.150798
DO - 10.1016/j.apsusc.2021.150798
M3 - Article
AN - SCOPUS:85112014208
SN - 0169-4332
VL - 567
JO - Applied Surface Science
JF - Applied Surface Science
M1 - 150798
ER -