Origin of suppressed polarization in BiFeO3 films

J. W. Park; S. H. Baek; P. Wu; B. Winchester; C. T. Nelson; X. Q. Pan; L. Q. Chen; T. Tybell; C. B. Eom

doi:10.1063/1.3506902

Origin of suppressed polarization in BiFeO₃ films

J. W. Park, S. H. Baek, P. Wu, B. Winchester, C. T. Nelson, X. Q. Pan, L. Q. Chen, T. Tybell, C. B. Eom

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Abstract

We have studied the origin of suppressed remanent polarization in 4-variant BiFeO₃ by correlating microscopic observations of ferroelectric/ferroelastic domain structures and ferroelectric measurements of (001) epitaxial BiFeO₃ thin films with 2- and 4-ferroelastic domain variants. Piezoelectric force microscopy revealed that domain wall pinning was the cause of the reduced polarization observed in 4-variant BiFeO₃. Using repetitive switching, the unswitched domains were completely switched and the remanent polarization reached a value comparable to 2-variant BiFeO ₃. These results demonstrate that control of ferroelastic domains in rhombohedral systems is necessary in order to obtain high performance and reliable ferroelectric and magnetoelectric devices.

Original language	English (US)
Article number	212904
Journal	Applied Physics Letters
Volume	97
Issue number	21
DOIs	https://doi.org/10.1063/1.3506902
State	Published - Nov 22 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3506902

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title = "Origin of suppressed polarization in BiFeO3 films",

abstract = "We have studied the origin of suppressed remanent polarization in 4-variant BiFeO3 by correlating microscopic observations of ferroelectric/ferroelastic domain structures and ferroelectric measurements of (001) epitaxial BiFeO3 thin films with 2- and 4-ferroelastic domain variants. Piezoelectric force microscopy revealed that domain wall pinning was the cause of the reduced polarization observed in 4-variant BiFeO3. Using repetitive switching, the unswitched domains were completely switched and the remanent polarization reached a value comparable to 2-variant BiFeO 3. These results demonstrate that control of ferroelastic domains in rhombohedral systems is necessary in order to obtain high performance and reliable ferroelectric and magnetoelectric devices.",

author = "Park, {J. W.} and Baek, {S. H.} and P. Wu and B. Winchester and Nelson, {C. T.} and Pan, {X. Q.} and Chen, {L. Q.} and T. Tybell and Eom, {C. B.}",

note = "Funding Information: This work is supported by the Army Research Office under Grant No. W911NF-10-1-0362 and the National Science Foundation under Grant No. ECCS-0708759.",

year = "2010",

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doi = "10.1063/1.3506902",

language = "English (US)",

volume = "97",

journal = "Applied Physics Letters",

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T1 - Origin of suppressed polarization in BiFeO3 films

AU - Park, J. W.

AU - Baek, S. H.

AU - Wu, P.

AU - Winchester, B.

AU - Nelson, C. T.

AU - Pan, X. Q.

AU - Chen, L. Q.

AU - Tybell, T.

AU - Eom, C. B.

N1 - Funding Information: This work is supported by the Army Research Office under Grant No. W911NF-10-1-0362 and the National Science Foundation under Grant No. ECCS-0708759.

PY - 2010/11/22

Y1 - 2010/11/22

N2 - We have studied the origin of suppressed remanent polarization in 4-variant BiFeO3 by correlating microscopic observations of ferroelectric/ferroelastic domain structures and ferroelectric measurements of (001) epitaxial BiFeO3 thin films with 2- and 4-ferroelastic domain variants. Piezoelectric force microscopy revealed that domain wall pinning was the cause of the reduced polarization observed in 4-variant BiFeO3. Using repetitive switching, the unswitched domains were completely switched and the remanent polarization reached a value comparable to 2-variant BiFeO 3. These results demonstrate that control of ferroelastic domains in rhombohedral systems is necessary in order to obtain high performance and reliable ferroelectric and magnetoelectric devices.

AB - We have studied the origin of suppressed remanent polarization in 4-variant BiFeO3 by correlating microscopic observations of ferroelectric/ferroelastic domain structures and ferroelectric measurements of (001) epitaxial BiFeO3 thin films with 2- and 4-ferroelastic domain variants. Piezoelectric force microscopy revealed that domain wall pinning was the cause of the reduced polarization observed in 4-variant BiFeO3. Using repetitive switching, the unswitched domains were completely switched and the remanent polarization reached a value comparable to 2-variant BiFeO 3. These results demonstrate that control of ferroelastic domains in rhombohedral systems is necessary in order to obtain high performance and reliable ferroelectric and magnetoelectric devices.

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ER -

Origin of suppressed polarization in BiFeO₃ films

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