Abstract
The (110) orientation of yttria and ceria is observed in the growth of epitaxial oxide films on (100) silicon despite the (100) orientation having a lower lattice mismatch. The orientations would be expected if an epitaxial metal silicide layer forms initially during growth, before the oxidizing ambient is introduced. The calculation ensuing lattice mismatch between the oxide and silicide layer, and the multiplicity of the near coincident-site lattice for the oxide lattice shows the (110) orientation is better lattice-matched than the (100) orientation for yttria and ceria. The in-plane orientation yielding the lowest mismatch with the silicide layer is consistent with the in-plane orientation observed between the oxide film and silicide substrate.
Original language | English (US) |
---|---|
Pages (from-to) | 333-338 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 477 |
DOIs | |
State | Published - 1997 |
Event | Proceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA Duration: Mar 31 1997 → … |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering