Origin of the (110) orientation of Y2O3 and CeO2 epitaxial films grown on (100) silicon

R. L. Goettler, J. P. Maria, D. G. Schlom

Research output: Contribution to journalConference articlepeer-review

22 Scopus citations


The (110) orientation of yttria and ceria is observed in the growth of epitaxial oxide films on (100) silicon despite the (100) orientation having a lower lattice mismatch. The orientations would be expected if an epitaxial metal silicide layer forms initially during growth, before the oxidizing ambient is introduced. The calculation ensuing lattice mismatch between the oxide and silicide layer, and the multiplicity of the near coincident-site lattice for the oxide lattice shows the (110) orientation is better lattice-matched than the (100) orientation for yttria and ceria. The in-plane orientation yielding the lowest mismatch with the silicide layer is consistent with the in-plane orientation observed between the oxide film and silicide substrate.

Original languageEnglish (US)
Pages (from-to)333-338
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - Jan 1 1997
EventProceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA
Duration: Mar 31 1997 → …

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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