Ortho-para conversion of H2 in crystalline silicon

Roger M. Herman; Alejandro Suarez; Jorge Sofo; John Courtenay Lewis

doi:10.1063/1.3517574

Ortho-para conversion of H₂ in crystalline silicon

Roger M. Herman, Alejandro Suarez, Jorge Sofo, John Courtenay Lewis

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

The ortho-para conversion rate of H₂ in crystalline p doped silicon is calculated assuming that the conversion is due to the unpaired electron spins associated with holes with the electron spin density at the H₂ nuclei being enhanced through spin exchange effects.

Original language	English (US)
Title of host publication	20th International Conference on Spectral Line Shapes, ICSLS
Pages	284-288
Number of pages	5
DOIs	https://doi.org/10.1063/1.3517574
State	Published - 2010
Event	20th International Conference on Spectral Line Shapes, ICSLS - St. John's, NL, Canada Duration: Jun 6 2010 → Jun 11 2010

Publication series

Name	AIP Conference Proceedings
Volume	1290
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	20th International Conference on Spectral Line Shapes, ICSLS
Country/Territory	Canada
City	St. John's, NL
Period	6/6/10 → 6/11/10

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Access to Document

10.1063/1.3517574

Cite this

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title = "Ortho-para conversion of H2 in crystalline silicon",

abstract = "The ortho-para conversion rate of H2 in crystalline p doped silicon is calculated assuming that the conversion is due to the unpaired electron spins associated with holes with the electron spin density at the H2 nuclei being enhanced through spin exchange effects.",

author = "Herman, {Roger M.} and Alejandro Suarez and Jorge Sofo and Lewis, {John Courtenay}",

year = "2010",

doi = "10.1063/1.3517574",

language = "English (US)",

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series = "AIP Conference Proceedings",

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T1 - Ortho-para conversion of H2 in crystalline silicon

AU - Herman, Roger M.

AU - Suarez, Alejandro

AU - Sofo, Jorge

AU - Lewis, John Courtenay

PY - 2010

Y1 - 2010

N2 - The ortho-para conversion rate of H2 in crystalline p doped silicon is calculated assuming that the conversion is due to the unpaired electron spins associated with holes with the electron spin density at the H2 nuclei being enhanced through spin exchange effects.

AB - The ortho-para conversion rate of H2 in crystalline p doped silicon is calculated assuming that the conversion is due to the unpaired electron spins associated with holes with the electron spin density at the H2 nuclei being enhanced through spin exchange effects.

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U2 - 10.1063/1.3517574

DO - 10.1063/1.3517574

M3 - Conference contribution

AN - SCOPUS:78649901025

SN - 9780735408456

T3 - AIP Conference Proceedings

SP - 284

EP - 288

BT - 20th International Conference on Spectral Line Shapes, ICSLS

T2 - 20th International Conference on Spectral Line Shapes, ICSLS

Y2 - 6 June 2010 through 11 June 2010

ER -