Oscillatory crossover from two-dimensional to three-dimensional topological insulators

Chao Xing Liu; Haijun Zhang; Binghai Yan; Xiao Liang Qi; Thomas Frauenheim; Xi Dai; Zhong Fang; Shou Cheng Zhang

doi:10.1103/PhysRevB.81.041307

Oscillatory crossover from two-dimensional to three-dimensional topological insulators

Chao Xing Liu, Haijun Zhang, Binghai Yan, Xiao Liang Qi, Thomas Frauenheim, Xi Dai, Zhong Fang, Shou Cheng Zhang

Physics

Research output: Contribution to journal › Article › peer-review

496 Scopus citations

Abstract

We investigate the crossover regime from three-dimensional topological insulators Bi2 Te3 and Bi2 Se3 to two-dimensional topological insulators with quantum spin Hall effect when the layer thickness is reduced. Using both analytical models and first-principles calculations, we find that the crossover occurs in an oscillatory fashion as a function of the layer thickness, alternating between topologically trivial and nontrivial two-dimensional behavior.

Original language	English (US)
Article number	041307
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	81
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.81.041307
State	Published - Jan 19 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.81.041307

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abstract = "We investigate the crossover regime from three-dimensional topological insulators Bi2 Te3 and Bi2 Se3 to two-dimensional topological insulators with quantum spin Hall effect when the layer thickness is reduced. Using both analytical models and first-principles calculations, we find that the crossover occurs in an oscillatory fashion as a function of the layer thickness, alternating between topologically trivial and nontrivial two-dimensional behavior.",

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AU - Liu, Chao Xing

AU - Zhang, Haijun

AU - Yan, Binghai

AU - Qi, Xiao Liang

AU - Frauenheim, Thomas

AU - Dai, Xi

AU - Fang, Zhong

AU - Zhang, Shou Cheng

PY - 2010/1/19

Y1 - 2010/1/19

N2 - We investigate the crossover regime from three-dimensional topological insulators Bi2 Te3 and Bi2 Se3 to two-dimensional topological insulators with quantum spin Hall effect when the layer thickness is reduced. Using both analytical models and first-principles calculations, we find that the crossover occurs in an oscillatory fashion as a function of the layer thickness, alternating between topologically trivial and nontrivial two-dimensional behavior.

AB - We investigate the crossover regime from three-dimensional topological insulators Bi2 Te3 and Bi2 Se3 to two-dimensional topological insulators with quantum spin Hall effect when the layer thickness is reduced. Using both analytical models and first-principles calculations, we find that the crossover occurs in an oscillatory fashion as a function of the layer thickness, alternating between topologically trivial and nontrivial two-dimensional behavior.

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U2 - 10.1103/PhysRevB.81.041307

DO - 10.1103/PhysRevB.81.041307

M3 - Article

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 4

M1 - 041307

ER -

Oscillatory crossover from two-dimensional to three-dimensional topological insulators

Abstract

All Science Journal Classification (ASJC) codes

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