@article{5c75abc9b28e4e9883d8f3816591fd4f,
title = "Outdiffusion of la and Al from amorphous LaAlO3 in direct contact with Si (001)",
abstract = "We have evaluated the thermal stability of Al2O3 / LaAlO3 /Si (001) stacks with atomic force microscopy, x-ray diffraction, transmission electron microscopy, and secondary ion mass spectrometry using a back side polishing approach. Crystallization of the amorphous LaAlO3 film was found to occur for rapid thermal anneals (RTA) above 935 °C for 20 s, in flowing N2. Penetration of Al and La into the underlying Si (001) is clearly observed for RTA at or above 950 °C for 20 s in flowing N2.",
author = "P. Sivasubramani and Kim, {M. J.} and Gnade, {B. E.} and Wallace, {R. M.} and Edge, {L. F.} and Schlom, {D. G.} and Craft, {H. S.} and Maria, {J. P.}",
note = "Funding Information: The authors acknowledge Scott Baumann and Roger Bleiler of Evans-Texas for SIMS analysis. They thank Professor J. Kim, Professor I. Trachtenberg, and Professor D. Shaw for useful discussions; P. Zhao and U. S. Bhansali for assistance with the RTA and AFM; and the TEM sample preparation group. They would like to acknowledge Bernd Holl{\"a}nder and J{\"u}rgen Schubert for the RBS analysis. The authors gratefully acknowledge the financial supportof the Semiconductor Research Corporation (SRC) andEMATECH through the SRC/SEMATECH FEP Transition Center. One of the authors (L. F. E.) gratefully acknowledges an AMD/SRC fellowship. ",
year = "2005",
month = may,
day = "16",
doi = "10.1063/1.1928316",
language = "English (US)",
volume = "86",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "20",
}