Outdiffusion of la and Al from amorphous LaAlO3 in direct contact with Si (001)

P. Sivasubramani; M. J. Kim; B. E. Gnade; R. M. Wallace; L. F. Edge; D. G. Schlom; H. S. Craft; J. P. Maria

doi:10.1063/1.1928316

Outdiffusion of la and Al from amorphous LaAlO3 in direct contact with Si (001)

P. Sivasubramani
, M. J. Kim
, B. E. Gnade
, R. M. Wallace
, L. F. Edge
, D. G. Schlom
, H. S. Craft
, J. P. Maria

Research output: Contribution to journal › Article › peer-review

69 Scopus citations

Abstract

We have evaluated the thermal stability of Al2O3 / LaAlO3 /Si (001) stacks with atomic force microscopy, x-ray diffraction, transmission electron microscopy, and secondary ion mass spectrometry using a back side polishing approach. Crystallization of the amorphous LaAlO3 film was found to occur for rapid thermal anneals (RTA) above 935 °C for 20 s, in flowing N2. Penetration of Al and La into the underlying Si (001) is clearly observed for RTA at or above 950 °C for 20 s in flowing N2.

Original language	English (US)
Article number	201901
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	20
DOIs	https://doi.org/10.1063/1.1928316
State	Published - May 16 2005

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1928316

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@article{5c75abc9b28e4e9883d8f3816591fd4f,

title = "Outdiffusion of la and Al from amorphous LaAlO3 in direct contact with Si (001)",

abstract = "We have evaluated the thermal stability of Al2O3 / LaAlO3 /Si (001) stacks with atomic force microscopy, x-ray diffraction, transmission electron microscopy, and secondary ion mass spectrometry using a back side polishing approach. Crystallization of the amorphous LaAlO3 film was found to occur for rapid thermal anneals (RTA) above 935 °C for 20 s, in flowing N2. Penetration of Al and La into the underlying Si (001) is clearly observed for RTA at or above 950 °C for 20 s in flowing N2.",

author = "P. Sivasubramani and Kim, \{M. J.\} and Gnade, \{B. E.\} and Wallace, \{R. M.\} and Edge, \{L. F.\} and Schlom, \{D. G.\} and Craft, \{H. S.\} and Maria, \{J. P.\}",

note = "Funding Information: The authors acknowledge Scott Baumann and Roger Bleiler of Evans-Texas for SIMS analysis. They thank Professor J. Kim, Professor I. Trachtenberg, and Professor D. Shaw for useful discussions; P. Zhao and U. S. Bhansali for assistance with the RTA and AFM; and the TEM sample preparation group. They would like to acknowledge Bernd Holl{\"a}nder and J{\"u}rgen Schubert for the RBS analysis. The authors gratefully acknowledge the financial supportof the Semiconductor Research Corporation (SRC) andEMATECH through the SRC/SEMATECH FEP Transition Center. One of the authors (L. F. E.) gratefully acknowledges an AMD/SRC fellowship. ",

year = "2005",

month = may,

day = "16",

doi = "10.1063/1.1928316",

language = "English (US)",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Outdiffusion of la and Al from amorphous LaAlO3 in direct contact with Si (001)

AU - Sivasubramani, P.

AU - Kim, M. J.

AU - Gnade, B. E.

AU - Wallace, R. M.

AU - Edge, L. F.

AU - Schlom, D. G.

AU - Craft, H. S.

AU - Maria, J. P.

N1 - Funding Information: The authors acknowledge Scott Baumann and Roger Bleiler of Evans-Texas for SIMS analysis. They thank Professor J. Kim, Professor I. Trachtenberg, and Professor D. Shaw for useful discussions; P. Zhao and U. S. Bhansali for assistance with the RTA and AFM; and the TEM sample preparation group. They would like to acknowledge Bernd Holländer and Jürgen Schubert for the RBS analysis. The authors gratefully acknowledge the financial supportof the Semiconductor Research Corporation (SRC) andEMATECH through the SRC/SEMATECH FEP Transition Center. One of the authors (L. F. E.) gratefully acknowledges an AMD/SRC fellowship.

PY - 2005/5/16

Y1 - 2005/5/16

N2 - We have evaluated the thermal stability of Al2O3 / LaAlO3 /Si (001) stacks with atomic force microscopy, x-ray diffraction, transmission electron microscopy, and secondary ion mass spectrometry using a back side polishing approach. Crystallization of the amorphous LaAlO3 film was found to occur for rapid thermal anneals (RTA) above 935 °C for 20 s, in flowing N2. Penetration of Al and La into the underlying Si (001) is clearly observed for RTA at or above 950 °C for 20 s in flowing N2.

AB - We have evaluated the thermal stability of Al2O3 / LaAlO3 /Si (001) stacks with atomic force microscopy, x-ray diffraction, transmission electron microscopy, and secondary ion mass spectrometry using a back side polishing approach. Crystallization of the amorphous LaAlO3 film was found to occur for rapid thermal anneals (RTA) above 935 °C for 20 s, in flowing N2. Penetration of Al and La into the underlying Si (001) is clearly observed for RTA at or above 950 °C for 20 s in flowing N2.

UR - https://www.scopus.com/pages/publications/20944439392

UR - https://www.scopus.com/pages/publications/20944439392#tab=citedBy

U2 - 10.1063/1.1928316

DO - 10.1063/1.1928316

M3 - Article

AN - SCOPUS:20944439392

SN - 0003-6951

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 201901

ER -

Outdiffusion of la and Al from amorphous LaAlO3 in direct contact with Si (001)

Abstract

All Science Journal Classification (ASJC) codes

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