Oxidation resistant sol-gel derived silicon oxynitride thin films

Richard K. Brow; Carlo G. Pantano

doi:10.1063/1.96750

Oxidation resistant sol-gel derived silicon oxynitride thin films

Richard K. Brow, Carlo G. Pantano

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Silicon oxynitride films, made by reacting porous, sol-gel derived silicon dioxide with ammonia, were oxidized in dry O₂ between 800 and 1000°C. Film oxidation was characterized by ellipsometry and secondary ion mass spectrometry. Increasing the nitrogen content of the film increased oxidation resistance of the film.

Original language	English (US)
Pages (from-to)	27-29
Number of pages	3
Journal	Applied Physics Letters
Volume	48
Issue number	1
DOIs	https://doi.org/10.1063/1.96750
State	Published - 1986

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.96750

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title = "Oxidation resistant sol-gel derived silicon oxynitride thin films",

abstract = "Silicon oxynitride films, made by reacting porous, sol-gel derived silicon dioxide with ammonia, were oxidized in dry O2 between 800 and 1000°C. Film oxidation was characterized by ellipsometry and secondary ion mass spectrometry. Increasing the nitrogen content of the film increased oxidation resistance of the film.",

author = "Brow, {Richard K.} and Pantano, {Carlo G.}",

year = "1986",

doi = "10.1063/1.96750",

language = "English (US)",

volume = "48",

pages = "27--29",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

number = "1",

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T1 - Oxidation resistant sol-gel derived silicon oxynitride thin films

AU - Brow, Richard K.

AU - Pantano, Carlo G.

PY - 1986

Y1 - 1986

N2 - Silicon oxynitride films, made by reacting porous, sol-gel derived silicon dioxide with ammonia, were oxidized in dry O2 between 800 and 1000°C. Film oxidation was characterized by ellipsometry and secondary ion mass spectrometry. Increasing the nitrogen content of the film increased oxidation resistance of the film.

AB - Silicon oxynitride films, made by reacting porous, sol-gel derived silicon dioxide with ammonia, were oxidized in dry O2 between 800 and 1000°C. Film oxidation was characterized by ellipsometry and secondary ion mass spectrometry. Increasing the nitrogen content of the film increased oxidation resistance of the film.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

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Oxidation resistant sol-gel derived silicon oxynitride thin films

Abstract

All Science Journal Classification (ASJC) codes

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