Oxidation resistant sol-gel derived silicon oxynitride thin films

Richard K. Brow, Carlo G. Pantano

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Silicon oxynitride films, made by reacting porous, sol-gel derived silicon dioxide with ammonia, were oxidized in dry O2 between 800 and 1000°C. Film oxidation was characterized by ellipsometry and secondary ion mass spectrometry. Increasing the nitrogen content of the film increased oxidation resistance of the film.

Original languageEnglish (US)
Pages (from-to)27-29
Number of pages3
JournalApplied Physics Letters
Issue number1
StatePublished - 1986

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Oxidation resistant sol-gel derived silicon oxynitride thin films'. Together they form a unique fingerprint.

Cite this