Oxide defect characterization in semiconductor dielectrics by electron spin resonance spectroscopy

R. K. Lowry, H. L. Evans, Patrick M. Lenahan

Research output: Contribution to journalConference articlepeer-review


Thin films fundamental to semiconductor technology include thin gate oxides and the inter-level dielectrics that separate conductive metal interconnects in devices. These oxide films must be free of contaminants or charge trapping structures that could diminish their performance as dielectrics. Electron Spin Resonance (ESR) spectroscopy, long used to study structural defects in bulk glasses, is finding expanded applications to the thin oxide films essential for today's integrated circuits. This paper summarizes the method of ESR, its applications to solving problems in circuit device trouble-shooting and process improvement, and its evolving role in building reliability in to first-of-kind microelectronic processes and products rather than testing it in at the end of the manufacturing process.

Original languageEnglish (US)
Pages (from-to)135-141
Number of pages7
JournalInstitute of Environmental Sciences - Proceedings, Annual Technical Meeting
StatePublished - Dec 1 1996
EventProceedings of the 1996 42nd Annual Technical Meeting of the Institute of Environmental Sciences - Orlando, FL, USA
Duration: May 12 1996May 16 1996

All Science Journal Classification (ASJC) codes

  • Environmental Engineering


Dive into the research topics of 'Oxide defect characterization in semiconductor dielectrics by electron spin resonance spectroscopy'. Together they form a unique fingerprint.

Cite this