Oxide semiconductor thin film transistors on thin solution-cast flexible substrates

Haoyu U. Li; Thomas N. Jackson

doi:10.1109/LED.2014.2371011

Oxide semiconductor thin film transistors on thin solution-cast flexible substrates

Haoyu U. Li, Thomas N. Jackson

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

We report ZnO thin-film transistors (TFTs) fabricated on solution-cast thin polyimide flexible substrates. Plasma-enhanced atomic layer deposition was used to deposit ZnO semiconductor and Al₂O₃ dielectric layers and the highest processing temperature used was 200 °C. The TFTs fabricated on thin polyimide substrates have characteristics very similar to devices fabricated on glass substrates and device characteristics changed little with release from the casting substrate. Typical TFT mobility was >12 cm² v_s for a gate electric field of 2 MV/cm. Released substrates with the TFTs were flexed between 3.5-mm radius and flat for 50000 cycles with little change in device characteristics. These results demonstrate solution casting of thin polymer layer substrates as a simple path to oxide semiconductor flexible electronics.

Original language	English (US)
Article number	6957528
Pages (from-to)	35-37
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	1
DOIs	https://doi.org/10.1109/LED.2014.2371011
State	Published - Jan 1 2015

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2014.2371011

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title = "Oxide semiconductor thin film transistors on thin solution-cast flexible substrates",

abstract = "We report ZnO thin-film transistors (TFTs) fabricated on solution-cast thin polyimide flexible substrates. Plasma-enhanced atomic layer deposition was used to deposit ZnO semiconductor and Al2O3 dielectric layers and the highest processing temperature used was 200 °C. The TFTs fabricated on thin polyimide substrates have characteristics very similar to devices fabricated on glass substrates and device characteristics changed little with release from the casting substrate. Typical TFT mobility was >12 cm2 vs for a gate electric field of 2 MV/cm. Released substrates with the TFTs were flexed between 3.5-mm radius and flat for 50000 cycles with little change in device characteristics. These results demonstrate solution casting of thin polymer layer substrates as a simple path to oxide semiconductor flexible electronics.",

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N2 - We report ZnO thin-film transistors (TFTs) fabricated on solution-cast thin polyimide flexible substrates. Plasma-enhanced atomic layer deposition was used to deposit ZnO semiconductor and Al2O3 dielectric layers and the highest processing temperature used was 200 °C. The TFTs fabricated on thin polyimide substrates have characteristics very similar to devices fabricated on glass substrates and device characteristics changed little with release from the casting substrate. Typical TFT mobility was >12 cm2 vs for a gate electric field of 2 MV/cm. Released substrates with the TFTs were flexed between 3.5-mm radius and flat for 50000 cycles with little change in device characteristics. These results demonstrate solution casting of thin polymer layer substrates as a simple path to oxide semiconductor flexible electronics.

AB - We report ZnO thin-film transistors (TFTs) fabricated on solution-cast thin polyimide flexible substrates. Plasma-enhanced atomic layer deposition was used to deposit ZnO semiconductor and Al2O3 dielectric layers and the highest processing temperature used was 200 °C. The TFTs fabricated on thin polyimide substrates have characteristics very similar to devices fabricated on glass substrates and device characteristics changed little with release from the casting substrate. Typical TFT mobility was >12 cm2 vs for a gate electric field of 2 MV/cm. Released substrates with the TFTs were flexed between 3.5-mm radius and flat for 50000 cycles with little change in device characteristics. These results demonstrate solution casting of thin polymer layer substrates as a simple path to oxide semiconductor flexible electronics.

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Oxide semiconductor thin film transistors on thin solution-cast flexible substrates

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