Oxygen-related dielectric relaxation and leakage characteristics of Pt/(Ba,Sr)TiO3/Pt thin-film capacitors

Mingrong Shen; Zhenggao Dong; Zhaoqiang Gan; Shuibing Ge; Wenwu Cao

doi:10.1063/1.1468259

Oxygen-related dielectric relaxation and leakage characteristics of Pt/(Ba,Sr)TiO₃/Pt thin-film capacitors

Mingrong Shen
, Zhenggao Dong
, Zhaoqiang Gan
, Shuibing Ge
, Wenwu Cao

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

The leakage characteristics and dielectric properties of Pt/(Ba,Sr)TiO ₃/Pt thin-film capacitors were found to be remarkably sensitive to the postannealing temperature in oxygen and nitrogen atmosphere. High leakage currents and low-frequency dielectric relaxation were found in as-deposited capacitors after they had been postannealed in nitrogen at 550°C and subsequently annealed in oxygen at 350°C. Such results are related to the mobile oxygen ions and oxygen vacancies accumulated in the (Ba,Sr)TiO ₃ films. The chemical process of the formation of charged oxygen ions during postannealing is proposed.

Original language	English (US)
Pages (from-to)	2538-2540
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	14
DOIs	https://doi.org/10.1063/1.1468259
State	Published - Apr 8 2002

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1468259

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title = "Oxygen-related dielectric relaxation and leakage characteristics of Pt/(Ba,Sr)TiO3/Pt thin-film capacitors",

abstract = "The leakage characteristics and dielectric properties of Pt/(Ba,Sr)TiO 3/Pt thin-film capacitors were found to be remarkably sensitive to the postannealing temperature in oxygen and nitrogen atmosphere. High leakage currents and low-frequency dielectric relaxation were found in as-deposited capacitors after they had been postannealed in nitrogen at 550°C and subsequently annealed in oxygen at 350°C. Such results are related to the mobile oxygen ions and oxygen vacancies accumulated in the (Ba,Sr)TiO 3 films. The chemical process of the formation of charged oxygen ions during postannealing is proposed.",

author = "Mingrong Shen and Zhenggao Dong and Zhaoqiang Gan and Shuibing Ge and Wenwu Cao",

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T1 - Oxygen-related dielectric relaxation and leakage characteristics of Pt/(Ba,Sr)TiO3/Pt thin-film capacitors

AU - Shen, Mingrong

AU - Dong, Zhenggao

AU - Gan, Zhaoqiang

AU - Ge, Shuibing

AU - Cao, Wenwu

PY - 2002/4/8

Y1 - 2002/4/8

N2 - The leakage characteristics and dielectric properties of Pt/(Ba,Sr)TiO 3/Pt thin-film capacitors were found to be remarkably sensitive to the postannealing temperature in oxygen and nitrogen atmosphere. High leakage currents and low-frequency dielectric relaxation were found in as-deposited capacitors after they had been postannealed in nitrogen at 550°C and subsequently annealed in oxygen at 350°C. Such results are related to the mobile oxygen ions and oxygen vacancies accumulated in the (Ba,Sr)TiO 3 films. The chemical process of the formation of charged oxygen ions during postannealing is proposed.

AB - The leakage characteristics and dielectric properties of Pt/(Ba,Sr)TiO 3/Pt thin-film capacitors were found to be remarkably sensitive to the postannealing temperature in oxygen and nitrogen atmosphere. High leakage currents and low-frequency dielectric relaxation were found in as-deposited capacitors after they had been postannealed in nitrogen at 550°C and subsequently annealed in oxygen at 350°C. Such results are related to the mobile oxygen ions and oxygen vacancies accumulated in the (Ba,Sr)TiO 3 films. The chemical process of the formation of charged oxygen ions during postannealing is proposed.

UR - https://www.scopus.com/pages/publications/79956031455

UR - https://www.scopus.com/pages/publications/79956031455#tab=citedBy

U2 - 10.1063/1.1468259

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SN - 0003-6951

VL - 80

SP - 2538

EP - 2540

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Oxygen-related dielectric relaxation and leakage characteristics of Pt/(Ba,Sr)TiO₃/Pt thin-film capacitors

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