P. Oelhafen, J. L. Freeouf, T. S. Kuan, T. N. Jackson, P. E. Batson

Research output: Contribution to journalConference articlepeer-review

42 Scopus citations


A study was made of the formation and properties of approximately equals 15 nm films of Pd on GaAs(100) and (110) substrates as a function of annealing temperature. Ultraviolet and x-ray photoelectron spectra (UPS and XPS) have established several distinctive phases; coupled with scanning electron microscopy studies, agglomeration has been observed at elevated temperatures. Transmission electron diffraction studies permit more detailed phase identification at specific temperatures. Electrical studies permit characterization of both interface properties and bulk transport properties of the reacted layer. In contrast to previous work, we find no Pd-As binary phases. After high temperature anneals (T//a greater than 350 degree C), only PdGa is observed.

Original languageEnglish (US)
Pages (from-to)588-592
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number3
StatePublished - 1983
EventProc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 10th - Santa Fe, NM, USA
Duration: Jan 25 1983Jan 27 1983

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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