@inproceedings{172e19e3a2fc45c688e3ec1ba2efc407,
title = "Paramagnetic defects and photoluminescence in carbon rich a-SiC:H films: Role of hydrogen and excess of carbon",
abstract = "We have studied the effect of excess of carbon in a-Si1-xC x:H on local structure reconstruction, evolution of paramagnetic defects and photoluminescence (PL) after vacuum annealing over the temperature range 300-850°C Two series of samples with stoichiometric (Si 0.5C0.5) and carbon-rich (Si0.3C0.7) compositions were studied by Electron Paramagnetic Resonance (EPR), Photoluminescence (PL) and Raman scattering. It is found that there exist two effects responsible for the PL efficiency of a-Si1-xCx:H films: {"}killing{"} effect of carbon-related paramagnetic defects and {"}enhancing{"} effect of carbon-hydrogen bonds in Si:C-Hn configuration. A microstructure model is proposed for explaining the non-monotonic behavior of integrated PL intensity and concentration of paramagnetic centers and Si:C-Hn bonds as a function of annealing temperature. This model evolves from the following principal processes during thermal treatment of a-S1-xCx:H: thermally activated release of weakly bonded hydrogen, migration of hydrogen within material and interaction of hydrogen with carbon-related defects.",
author = "Vasin, \{A. V.\} and Konchits, \{A. A.\} and Kolesnik, \{S. P.\} and Rusavsky, \{A. V.\} and Lysenko, \{V. S.\} and Nazarov, \{A. N.\} and Y. Ishikawa and S. Ashok",
year = "2007",
doi = "10.1557/proc-0994-f03-13",
language = "English (US)",
isbn = "9781558999541",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "321--326",
booktitle = "Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II",
address = "United States",
note = "Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II ; Conference date: 09-04-2007 Through 13-04-2007",
}