Abstract
We find that two paramagnetic]] trivalent silicon" centers appear to be primarily responsible for radiation damage in metal-oxide-silicon structures.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 96-98 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 44 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1984 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)