Passivation layer breakdown during laser-fired contact formation for photovoltaic devices

A. Raghavan, T. A. Palmer, T. Debroy

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Low resistance laser-fired ohmic contacts (LFCs) can be formed on the backside of Si-based solar cells using microsecond pulses. However, the impact of these longer pulse durations on the dielectric passivation layer is not clear. Retention of the passivation layer during processing is critical to ensure low recombination rates of electron-hole pairs at the rear surface of the device. In this work, advanced characterization tools are used to demonstrate that although the SiO2 passivation layer melts directly below the laser, it is well preserved outside the immediate LFC region over a wide range of processing parameters. As a result, low recombination rates at the passivation layer/wafer interface can be expected despite higher energy densities associated with these pulse durations.

Original languageEnglish (US)
Article number024105
JournalApplied Physics Letters
Issue number2
StatePublished - Jul 14 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Passivation layer breakdown during laser-fired contact formation for photovoltaic devices'. Together they form a unique fingerprint.

Cite this