TY - JOUR
T1 - Passivation of high energy hydrogen ion implantation damage in silicon with low energy atomic hydrogen
AU - Srikanth, K.
AU - Shenal, J.
AU - Ashok, S.
PY - 1994/6/2
Y1 - 1994/6/2
N2 - High-energy hydrogen ion (proton) implantation is used in Si for intentionally creating defects, while low-energy H is known for passivation of a variety of defects and impurities. We have carried out a study of low-energy ( < 0.4 keV) H passivation of defects produced by 100 keV H implantation. Both Schottky barrier transport and deep level transient spectroscopy measurements give evidence of self-passivation of defects produced by H implantation.
AB - High-energy hydrogen ion (proton) implantation is used in Si for intentionally creating defects, while low-energy H is known for passivation of a variety of defects and impurities. We have carried out a study of low-energy ( < 0.4 keV) H passivation of defects produced by 100 keV H implantation. Both Schottky barrier transport and deep level transient spectroscopy measurements give evidence of self-passivation of defects produced by H implantation.
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U2 - 10.1016/0168-583X(94)95390-2
DO - 10.1016/0168-583X(94)95390-2
M3 - Article
AN - SCOPUS:43949150571
SN - 0168-583X
VL - 88
SP - 401
EP - 406
JO - Nuclear Inst. and Methods in Physics Research, B
JF - Nuclear Inst. and Methods in Physics Research, B
IS - 4
ER -