Passivation of high energy hydrogen ion implantation damage in silicon with low energy atomic hydrogen

K. Srikanth; J. Shenal; S. Ashok

doi:10.1016/0168-583X(94)95390-2

Passivation of high energy hydrogen ion implantation damage in silicon with low energy atomic hydrogen

K. Srikanth
, J. Shenal
, S. Ashok

Research output: Contribution to journal › Article › peer-review

Abstract

High-energy hydrogen ion (proton) implantation is used in Si for intentionally creating defects, while low-energy H is known for passivation of a variety of defects and impurities. We have carried out a study of low-energy ( < 0.4 keV) H passivation of defects produced by 100 keV H implantation. Both Schottky barrier transport and deep level transient spectroscopy measurements give evidence of self-passivation of defects produced by H implantation.

Original language	English (US)
Pages (from-to)	401-406
Number of pages	6
Journal	Nuclear Inst. and Methods in Physics Research, B
Volume	88
Issue number	4
DOIs	https://doi.org/10.1016/0168-583X(94)95390-2
State	Published - Jun 2 1994

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Instrumentation

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10.1016/0168-583X(94)95390-2

Cite this

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abstract = "High-energy hydrogen ion (proton) implantation is used in Si for intentionally creating defects, while low-energy H is known for passivation of a variety of defects and impurities. We have carried out a study of low-energy ( < 0.4 keV) H passivation of defects produced by 100 keV H implantation. Both Schottky barrier transport and deep level transient spectroscopy measurements give evidence of self-passivation of defects produced by H implantation.",

author = "K. Srikanth and J. Shenal and S. Ashok",

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AU - Srikanth, K.

AU - Shenal, J.

AU - Ashok, S.

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Y1 - 1994/6/2

N2 - High-energy hydrogen ion (proton) implantation is used in Si for intentionally creating defects, while low-energy H is known for passivation of a variety of defects and impurities. We have carried out a study of low-energy ( < 0.4 keV) H passivation of defects produced by 100 keV H implantation. Both Schottky barrier transport and deep level transient spectroscopy measurements give evidence of self-passivation of defects produced by H implantation.

AB - High-energy hydrogen ion (proton) implantation is used in Si for intentionally creating defects, while low-energy H is known for passivation of a variety of defects and impurities. We have carried out a study of low-energy ( < 0.4 keV) H passivation of defects produced by 100 keV H implantation. Both Schottky barrier transport and deep level transient spectroscopy measurements give evidence of self-passivation of defects produced by H implantation.

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M3 - Article

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JF - Nuclear Inst. and Methods in Physics Research, B

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ER -

Passivation of high energy hydrogen ion implantation damage in silicon with low energy atomic hydrogen

Abstract

All Science Journal Classification (ASJC) codes

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