Passivation of ion-beam damage in metal-oxide-silicon structures by room-temperature hydrogenation

S. Kar; K. Srikanth; S. Ashok

doi:10.1063/1.106789

Passivation of ion-beam damage in metal-oxide-silicon structures by room-temperature hydrogenation

S. Kar
, K. Srikanth
, S. Ashok

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The efficacy of room-temperature hydrogenation, by a 400-eV hydrogen beam from a Kaufman source, in the removal of ion-beam-induced defects in metal-oxide-silicon (MOS) structures was investigated. The defects were generated by exposure of thermally oxidized silicon samples to a 16-kV Si ion beam in an ion implanter. The oxide thickness was 115 or 350 Å. Experimental results obtained from admittance-voltage-frequency measurements of the MOS structures indicated significant reductions in trap density and other defects.

Original language	English (US)
Pages (from-to)	3001-3003
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	24
DOIs	https://doi.org/10.1063/1.106789
State	Published - 1992

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.106789

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@article{8bf3aaaa6b9f402a955f987fb79ad062,

title = "Passivation of ion-beam damage in metal-oxide-silicon structures by room-temperature hydrogenation",

abstract = "The efficacy of room-temperature hydrogenation, by a 400-eV hydrogen beam from a Kaufman source, in the removal of ion-beam-induced defects in metal-oxide-silicon (MOS) structures was investigated. The defects were generated by exposure of thermally oxidized silicon samples to a 16-kV Si ion beam in an ion implanter. The oxide thickness was 115 or 350 {\AA}. Experimental results obtained from admittance-voltage-frequency measurements of the MOS structures indicated significant reductions in trap density and other defects.",

author = "S. Kar and K. Srikanth and S. Ashok",

year = "1992",

doi = "10.1063/1.106789",

language = "English (US)",

volume = "60",

pages = "3001--3003",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

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TY - JOUR

T1 - Passivation of ion-beam damage in metal-oxide-silicon structures by room-temperature hydrogenation

AU - Kar, S.

AU - Srikanth, K.

AU - Ashok, S.

PY - 1992

Y1 - 1992

N2 - The efficacy of room-temperature hydrogenation, by a 400-eV hydrogen beam from a Kaufman source, in the removal of ion-beam-induced defects in metal-oxide-silicon (MOS) structures was investigated. The defects were generated by exposure of thermally oxidized silicon samples to a 16-kV Si ion beam in an ion implanter. The oxide thickness was 115 or 350 Å. Experimental results obtained from admittance-voltage-frequency measurements of the MOS structures indicated significant reductions in trap density and other defects.

AB - The efficacy of room-temperature hydrogenation, by a 400-eV hydrogen beam from a Kaufman source, in the removal of ion-beam-induced defects in metal-oxide-silicon (MOS) structures was investigated. The defects were generated by exposure of thermally oxidized silicon samples to a 16-kV Si ion beam in an ion implanter. The oxide thickness was 115 or 350 Å. Experimental results obtained from admittance-voltage-frequency measurements of the MOS structures indicated significant reductions in trap density and other defects.

UR - https://www.scopus.com/pages/publications/0343813116

UR - https://www.scopus.com/pages/publications/0343813116#tab=citedBy

U2 - 10.1063/1.106789

DO - 10.1063/1.106789

M3 - Article

AN - SCOPUS:0343813116

SN - 0003-6951

VL - 60

SP - 3001

EP - 3003

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Passivation of ion-beam damage in metal-oxide-silicon structures by room-temperature hydrogenation

Abstract

All Science Journal Classification (ASJC) codes

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