Passivation of radiation damage in MOS structures by hydrogen ion implantation

S. Kar; S. Ashok

Passivation of radiation damage in MOS structures by hydrogen ion implantation

S. Kar
, S. Ashok

Research output: Contribution to conference › Paper › peer-review

Abstract

To generate the radiation-induced defects in the metal-oxide-silicon (MOS) structures, oxidized silicon wafers were exposed to a beam of 16 keV silicon ions. The oxide thickness was either 115 or 350 A. To passivate the ion-beam-induced defects, half the samples underwent ion beam hydrogenation, using a Kaufman gun, at room temperature. Before hydrogenation, the capacitance-voltage characteristics were absolutely flat. Upon hydrogenation, the admittance-voltage characteristics reverted to the standard MOS form.

Original language	English (US)
Pages	404-405
Number of pages	2
State	Published - 1992
Event	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: Aug 26 1992 → Aug 28 1992

Other

Other	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
City	Tsukuba, Jpn
Period	8/26/92 → 8/28/92

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@conference{e8b6967c464c49989bd360d51b3bbcd2,

title = "Passivation of radiation damage in MOS structures by hydrogen ion implantation",

abstract = "To generate the radiation-induced defects in the metal-oxide-silicon (MOS) structures, oxidized silicon wafers were exposed to a beam of 16 keV silicon ions. The oxide thickness was either 115 or 350 A. To passivate the ion-beam-induced defects, half the samples underwent ion beam hydrogenation, using a Kaufman gun, at room temperature. Before hydrogenation, the capacitance-voltage characteristics were absolutely flat. Upon hydrogenation, the admittance-voltage characteristics reverted to the standard MOS form.",

author = "S. Kar and S. Ashok",

year = "1992",

language = "English (US)",

pages = "404--405",

note = "Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 ; Conference date: 26-08-1992 Through 28-08-1992",

}

TY - CONF

T1 - Passivation of radiation damage in MOS structures by hydrogen ion implantation

AU - Kar, S.

AU - Ashok, S.

PY - 1992

Y1 - 1992

N2 - To generate the radiation-induced defects in the metal-oxide-silicon (MOS) structures, oxidized silicon wafers were exposed to a beam of 16 keV silicon ions. The oxide thickness was either 115 or 350 A. To passivate the ion-beam-induced defects, half the samples underwent ion beam hydrogenation, using a Kaufman gun, at room temperature. Before hydrogenation, the capacitance-voltage characteristics were absolutely flat. Upon hydrogenation, the admittance-voltage characteristics reverted to the standard MOS form.

AB - To generate the radiation-induced defects in the metal-oxide-silicon (MOS) structures, oxidized silicon wafers were exposed to a beam of 16 keV silicon ions. The oxide thickness was either 115 or 350 A. To passivate the ion-beam-induced defects, half the samples underwent ion beam hydrogenation, using a Kaufman gun, at room temperature. Before hydrogenation, the capacitance-voltage characteristics were absolutely flat. Upon hydrogenation, the admittance-voltage characteristics reverted to the standard MOS form.

UR - https://www.scopus.com/pages/publications/0026989267

UR - https://www.scopus.com/pages/publications/0026989267#tab=citedBy

M3 - Paper

AN - SCOPUS:0026989267

SP - 404

EP - 405

T2 - Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92

Y2 - 26 August 1992 through 28 August 1992

ER -

Passivation of radiation damage in MOS structures by hydrogen ion implantation

Abstract

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All Science Journal Classification (ASJC) codes

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