Pathway to depositing device-quality 50°C silicon nitride in a high-density plasma system

David G. Farber; Sanghoon Bae; Murat Okandan; Douglas M. Reber; Terence Kuzma; Stephen J. Fonash

doi:10.1149/1.1391923

Pathway to depositing device-quality 50°C silicon nitride in a high-density plasma system

David G. Farber, Sanghoon Bae, Murat Okandan, Douglas M. Reber, Terence Kuzma, Stephen J. Fonash

Center for Nanotechnology Education and Utilization (CNEU)

Research output: Contribution to journal › Article › peer-review

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Abstract

A process for depositing 50°C silicon nitride films has been developed in a high-density (electron cyclotron resonance) plasma system. While conventional 250°C deposited nitrides have Si-H/N-H bond ratios <1.0, the silane flow rates explored in this process are shown to result in Si-H/N-H bond ratios ≥1.0 and to have little effect on electrical properties in this range. Current densities of the resulting films are below 3 × 10^-9 A/cm² for electric fields below 2 MV/cm. Breakdown voltage, defined by 1 × 10^-6 A/cm², is greater than 6 MV/cm.

Original language	English (US)
Pages (from-to)	2254-2257
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	146
Issue number	6
DOIs	https://doi.org/10.1149/1.1391923
State	Published - Jun 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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10.1149/1.1391923

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abstract = "A process for depositing 50°C silicon nitride films has been developed in a high-density (electron cyclotron resonance) plasma system. While conventional 250°C deposited nitrides have Si-H/N-H bond ratios <1.0, the silane flow rates explored in this process are shown to result in Si-H/N-H bond ratios ≥1.0 and to have little effect on electrical properties in this range. Current densities of the resulting films are below 3 × 10-9 A/cm2 for electric fields below 2 MV/cm. Breakdown voltage, defined by 1 × 10-6 A/cm2, is greater than 6 MV/cm.",

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T1 - Pathway to depositing device-quality 50°C silicon nitride in a high-density plasma system

AU - Farber, David G.

AU - Bae, Sanghoon

AU - Okandan, Murat

AU - Reber, Douglas M.

AU - Kuzma, Terence

AU - Fonash, Stephen J.

PY - 1999/6

Y1 - 1999/6

N2 - A process for depositing 50°C silicon nitride films has been developed in a high-density (electron cyclotron resonance) plasma system. While conventional 250°C deposited nitrides have Si-H/N-H bond ratios <1.0, the silane flow rates explored in this process are shown to result in Si-H/N-H bond ratios ≥1.0 and to have little effect on electrical properties in this range. Current densities of the resulting films are below 3 × 10-9 A/cm2 for electric fields below 2 MV/cm. Breakdown voltage, defined by 1 × 10-6 A/cm2, is greater than 6 MV/cm.

AB - A process for depositing 50°C silicon nitride films has been developed in a high-density (electron cyclotron resonance) plasma system. While conventional 250°C deposited nitrides have Si-H/N-H bond ratios <1.0, the silane flow rates explored in this process are shown to result in Si-H/N-H bond ratios ≥1.0 and to have little effect on electrical properties in this range. Current densities of the resulting films are below 3 × 10-9 A/cm2 for electric fields below 2 MV/cm. Breakdown voltage, defined by 1 × 10-6 A/cm2, is greater than 6 MV/cm.

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Pathway to depositing device-quality 50°C silicon nitride in a high-density plasma system

Abstract

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