PbZrO3-based thin film capacitors with high energy storage efficiency

Yeongwoo Son; Stanislav Udovenko; Anand P.S. Gaur; Jun Cui; Xiaoli Tan; Susan Trolier-McKinstry

doi:10.1063/5.0237948

PbZrO₃-based thin film capacitors with high energy storage efficiency

Yeongwoo Son
, Stanislav Udovenko
, Anand P.S. Gaur
, Jun Cui
, Xiaoli Tan
, Susan Trolier-McKinstry

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Antiferroelectric (Pb_0.87Sr_0.05Ba_0.05La_0.02)(Zr_0.52Sn_0.40Ti_0.08)O₃ thin film capacitors were fabricated for dielectric energy storage. Thin films with excellent crystal quality (FWHM 0.021°) were prepared on (100) SrRuO₃/SrTiO₃ substrates by pulsed laser deposition. The out-of-plane lattice constant of the thin film was 4.110 ± 0.001 Å. An average maximum recoverable energy storage density, 88 ± 17 J cm⁻³ with an efficiency of 85% ± 6% at 1 kHz and 80 ± 15 J cm⁻³ with an efficiency of 91% ± 4% at 10 kHz, was achieved at room temperature. The capacitor was fatigue resistant up to 10⁶ cycles at an applied electric field of 2 MV cm⁻¹. These properties are linked to a low level of hysteresis and slow polarization saturation. PbZrO₃-derived oxide thin film capacitors are promising for high efficiency and low loss dielectric energy storage applications.

Original language	English (US)
Article number	212905
Journal	Applied Physics Letters
Volume	125
Issue number	21
DOIs	https://doi.org/10.1063/5.0237948
State	Published - Nov 18 2024

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/5.0237948

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@article{5867e58d758c4519a230e600f053f8f8,

title = "PbZrO3-based thin film capacitors with high energy storage efficiency",

abstract = "Antiferroelectric (Pb0.87Sr0.05Ba0.05La0.02)(Zr0.52Sn0.40Ti0.08)O3 thin film capacitors were fabricated for dielectric energy storage. Thin films with excellent crystal quality (FWHM 0.021°) were prepared on (100) SrRuO3/SrTiO3 substrates by pulsed laser deposition. The out-of-plane lattice constant of the thin film was 4.110 ± 0.001 {\AA}. An average maximum recoverable energy storage density, 88 ± 17 J cm−3 with an efficiency of 85\% ± 6\% at 1 kHz and 80 ± 15 J cm−3 with an efficiency of 91\% ± 4\% at 10 kHz, was achieved at room temperature. The capacitor was fatigue resistant up to 106 cycles at an applied electric field of 2 MV cm−1. These properties are linked to a low level of hysteresis and slow polarization saturation. PbZrO3-derived oxide thin film capacitors are promising for high efficiency and low loss dielectric energy storage applications.",

author = "Yeongwoo Son and Stanislav Udovenko and Gaur, \{Anand P.S.\} and Jun Cui and Xiaoli Tan and Susan Trolier-McKinstry",

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doi = "10.1063/5.0237948",

language = "English (US)",

volume = "125",

journal = "Applied Physics Letters",

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T1 - PbZrO3-based thin film capacitors with high energy storage efficiency

AU - Son, Yeongwoo

AU - Udovenko, Stanislav

AU - Gaur, Anand P.S.

AU - Cui, Jun

AU - Tan, Xiaoli

AU - Trolier-McKinstry, Susan

PY - 2024/11/18

Y1 - 2024/11/18

N2 - Antiferroelectric (Pb0.87Sr0.05Ba0.05La0.02)(Zr0.52Sn0.40Ti0.08)O3 thin film capacitors were fabricated for dielectric energy storage. Thin films with excellent crystal quality (FWHM 0.021°) were prepared on (100) SrRuO3/SrTiO3 substrates by pulsed laser deposition. The out-of-plane lattice constant of the thin film was 4.110 ± 0.001 Å. An average maximum recoverable energy storage density, 88 ± 17 J cm−3 with an efficiency of 85% ± 6% at 1 kHz and 80 ± 15 J cm−3 with an efficiency of 91% ± 4% at 10 kHz, was achieved at room temperature. The capacitor was fatigue resistant up to 106 cycles at an applied electric field of 2 MV cm−1. These properties are linked to a low level of hysteresis and slow polarization saturation. PbZrO3-derived oxide thin film capacitors are promising for high efficiency and low loss dielectric energy storage applications.

AB - Antiferroelectric (Pb0.87Sr0.05Ba0.05La0.02)(Zr0.52Sn0.40Ti0.08)O3 thin film capacitors were fabricated for dielectric energy storage. Thin films with excellent crystal quality (FWHM 0.021°) were prepared on (100) SrRuO3/SrTiO3 substrates by pulsed laser deposition. The out-of-plane lattice constant of the thin film was 4.110 ± 0.001 Å. An average maximum recoverable energy storage density, 88 ± 17 J cm−3 with an efficiency of 85% ± 6% at 1 kHz and 80 ± 15 J cm−3 with an efficiency of 91% ± 4% at 10 kHz, was achieved at room temperature. The capacitor was fatigue resistant up to 106 cycles at an applied electric field of 2 MV cm−1. These properties are linked to a low level of hysteresis and slow polarization saturation. PbZrO3-derived oxide thin film capacitors are promising for high efficiency and low loss dielectric energy storage applications.

UR - https://www.scopus.com/pages/publications/85209877880

UR - https://www.scopus.com/pages/publications/85209877880#tab=citedBy

U2 - 10.1063/5.0237948

DO - 10.1063/5.0237948

M3 - Article

AN - SCOPUS:85209877880

SN - 0003-6951

VL - 125

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212905

ER -

PbZrO₃-based thin film capacitors with high energy storage efficiency

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