Pd/Pt/Au ohmic contact for AlSb/InAs0.7Sb0.3 heterostructures

J. A. Robinson, S. E. Mohney, J. B. Boos, B. P. Tinkham, B. R. Bennett

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8 Scopus citations


A Pd/Pt/Au ohmic contact to AlSb/InAs0.7Sb0.3 heterostructures has been studied. The contacts provide a contact resistance of 0.07 (±0.01) Ω mm when annealed at 300 °C for 15 min. Prior to annealing, the contact reacts non-uniformly with the heterostructure, but not down to the InAs0.7Sb0.3 channel. Following annealing at 300 °C for 15 min, the entire heterostructure beneath the contact is consumed down to the underlying AlSb buffer layer. This morphology differs from that reported for optimized ohmic contacts to AlGaAs/GaAs heterostructures.

Original languageEnglish (US)
Pages (from-to)429-432
Number of pages4
JournalSolid-State Electronics
Issue number3
StatePublished - Mar 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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