Pd/Pt/Au ohmic contact for AlSb/InAs0.7Sb0.3 heterostructures

J. A. Robinson; S. E. Mohney; J. B. Boos; B. P. Tinkham; B. R. Bennett

doi:10.1016/j.sse.2006.01.009

Pd/Pt/Au ohmic contact for AlSb/InAs_0.7Sb_0.3 heterostructures

J. A. Robinson
, S. E. Mohney
, J. B. Boos
, B. P. Tinkham
, B. R. Bennett

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A Pd/Pt/Au ohmic contact to AlSb/InAs_0.7Sb_0.3 heterostructures has been studied. The contacts provide a contact resistance of 0.07 (±0.01) Ω mm when annealed at 300 °C for 15 min. Prior to annealing, the contact reacts non-uniformly with the heterostructure, but not down to the InAs_0.7Sb_0.3 channel. Following annealing at 300 °C for 15 min, the entire heterostructure beneath the contact is consumed down to the underlying AlSb buffer layer. This morphology differs from that reported for optimized ohmic contacts to AlGaAs/GaAs heterostructures.

Original language	English (US)
Pages (from-to)	429-432
Number of pages	4
Journal	Solid-State Electronics
Volume	50
Issue number	3
DOIs	https://doi.org/10.1016/j.sse.2006.01.009
State	Published - Mar 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2006.01.009

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title = "Pd/Pt/Au ohmic contact for AlSb/InAs0.7Sb0.3 heterostructures",

abstract = "A Pd/Pt/Au ohmic contact to AlSb/InAs0.7Sb0.3 heterostructures has been studied. The contacts provide a contact resistance of 0.07 (±0.01) Ω mm when annealed at 300 °C for 15 min. Prior to annealing, the contact reacts non-uniformly with the heterostructure, but not down to the InAs0.7Sb0.3 channel. Following annealing at 300 °C for 15 min, the entire heterostructure beneath the contact is consumed down to the underlying AlSb buffer layer. This morphology differs from that reported for optimized ohmic contacts to AlGaAs/GaAs heterostructures.",

author = "Robinson, \{J. A.\} and Mohney, \{S. E.\} and Boos, \{J. B.\} and Tinkham, \{B. P.\} and Bennett, \{B. R.\}",

year = "2006",

month = mar,

doi = "10.1016/j.sse.2006.01.009",

language = "English (US)",

volume = "50",

pages = "429--432",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "3",

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T1 - Pd/Pt/Au ohmic contact for AlSb/InAs0.7Sb0.3 heterostructures

AU - Robinson, J. A.

AU - Mohney, S. E.

AU - Boos, J. B.

AU - Tinkham, B. P.

AU - Bennett, B. R.

PY - 2006/3

Y1 - 2006/3

N2 - A Pd/Pt/Au ohmic contact to AlSb/InAs0.7Sb0.3 heterostructures has been studied. The contacts provide a contact resistance of 0.07 (±0.01) Ω mm when annealed at 300 °C for 15 min. Prior to annealing, the contact reacts non-uniformly with the heterostructure, but not down to the InAs0.7Sb0.3 channel. Following annealing at 300 °C for 15 min, the entire heterostructure beneath the contact is consumed down to the underlying AlSb buffer layer. This morphology differs from that reported for optimized ohmic contacts to AlGaAs/GaAs heterostructures.

AB - A Pd/Pt/Au ohmic contact to AlSb/InAs0.7Sb0.3 heterostructures has been studied. The contacts provide a contact resistance of 0.07 (±0.01) Ω mm when annealed at 300 °C for 15 min. Prior to annealing, the contact reacts non-uniformly with the heterostructure, but not down to the InAs0.7Sb0.3 channel. Following annealing at 300 °C for 15 min, the entire heterostructure beneath the contact is consumed down to the underlying AlSb buffer layer. This morphology differs from that reported for optimized ohmic contacts to AlGaAs/GaAs heterostructures.

UR - https://www.scopus.com/pages/publications/33646096975

UR - https://www.scopus.com/pages/publications/33646096975#tab=citedBy

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DO - 10.1016/j.sse.2006.01.009

M3 - Article

AN - SCOPUS:33646096975

SN - 0038-1101

VL - 50

SP - 429

EP - 432

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 3

ER -

Pd/Pt/Au ohmic contact for AlSb/InAs_0.7Sb_0.3 heterostructures

Abstract

All Science Journal Classification (ASJC) codes

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