Pd/Ru/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors

R. Dormaier; Q. Zhang; Y. C. Chou; M. D. Lange; J. M. Yang; A. Oki; S. E. Mohney

doi:10.1116/1.3204983

Pd/Ru/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors

R. Dormaier, Q. Zhang, Y. C. Chou, M. D. Lange, J. M. Yang, A. Oki, S. E. Mohney

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2 Scopus citations

Abstract

The authors describe a Pd/Ru/Au Ohmic contact with enhanced thermal stability over the more commonly used Pd/Pt/Au Ohmic contact for InAlSb/InAs high electron mobility transistors. Transmission electron microscopy shows that reaction between Pd and the semiconductor begins in samples even before they are annealed. Decreases in contact resistance are correlated with increasing reaction between Pd and the semiconductor for annealing and aging at 175-225 °C for 3 h or 1 week. Small voids form in severely aged samples but do not increase the contact resistance. The Ru diffusion barrier is never observed to react with any other materials in either the contact or the semiconductor, and Au remains isolated from the Pd-bearing reaction products and semiconductor.

Original language	English (US)
Pages (from-to)	2145-2152
Number of pages	8
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	5
DOIs	https://doi.org/10.1116/1.3204983
State	Published - 2009

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Pd/Ru/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors",

abstract = "The authors describe a Pd/Ru/Au Ohmic contact with enhanced thermal stability over the more commonly used Pd/Pt/Au Ohmic contact for InAlSb/InAs high electron mobility transistors. Transmission electron microscopy shows that reaction between Pd and the semiconductor begins in samples even before they are annealed. Decreases in contact resistance are correlated with increasing reaction between Pd and the semiconductor for annealing and aging at 175-225 °C for 3 h or 1 week. Small voids form in severely aged samples but do not increase the contact resistance. The Ru diffusion barrier is never observed to react with any other materials in either the contact or the semiconductor, and Au remains isolated from the Pd-bearing reaction products and semiconductor.",

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T1 - Pd/Ru/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors

AU - Dormaier, R.

AU - Zhang, Q.

AU - Chou, Y. C.

AU - Lange, M. D.

AU - Yang, J. M.

AU - Oki, A.

AU - Mohney, S. E.

PY - 2009

Y1 - 2009

N2 - The authors describe a Pd/Ru/Au Ohmic contact with enhanced thermal stability over the more commonly used Pd/Pt/Au Ohmic contact for InAlSb/InAs high electron mobility transistors. Transmission electron microscopy shows that reaction between Pd and the semiconductor begins in samples even before they are annealed. Decreases in contact resistance are correlated with increasing reaction between Pd and the semiconductor for annealing and aging at 175-225 °C for 3 h or 1 week. Small voids form in severely aged samples but do not increase the contact resistance. The Ru diffusion barrier is never observed to react with any other materials in either the contact or the semiconductor, and Au remains isolated from the Pd-bearing reaction products and semiconductor.

AB - The authors describe a Pd/Ru/Au Ohmic contact with enhanced thermal stability over the more commonly used Pd/Pt/Au Ohmic contact for InAlSb/InAs high electron mobility transistors. Transmission electron microscopy shows that reaction between Pd and the semiconductor begins in samples even before they are annealed. Decreases in contact resistance are correlated with increasing reaction between Pd and the semiconductor for annealing and aging at 175-225 °C for 3 h or 1 week. Small voids form in severely aged samples but do not increase the contact resistance. The Ru diffusion barrier is never observed to react with any other materials in either the contact or the semiconductor, and Au remains isolated from the Pd-bearing reaction products and semiconductor.

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Pd/Ru/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors

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