Pentacene-based organic thin-film transistors

Yen Yi Lin; David J. Gundlach; Shelby F. Nelson; Thomas N. Jackson

doi:10.1109/16.605476

Pentacene-based organic thin-film transistors

Yen Yi Lin, David J. Gundlach, Shelby F. Nelson, Thomas N. Jackson

Research output: Contribution to journal › Article › peer-review

555 Scopus citations

Abstract

Organic thin-film transistors using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active electronic material have shown mobility as large as 0.7 cm²/V-s and on/off current ratio larger than 10⁸; both values are comparable to hydrogenated amorphous silicon devices. On the other hand, these and most other organic TFT's have an undesirably large subthreshold slope. We show here that the large subthreshold slope typically observed is not an intrinsic property of the organic semiconducting material and that devices with subthreshold slope similar to amorphous silicon devices are possible.

Original language	English (US)
Pages (from-to)	1325-1331
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	44
Issue number	8
DOIs	https://doi.org/10.1109/16.605476
State	Published - 1997

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.605476

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title = "Pentacene-based organic thin-film transistors",

abstract = "Organic thin-film transistors using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active electronic material have shown mobility as large as 0.7 cm2/V-s and on/off current ratio larger than 108; both values are comparable to hydrogenated amorphous silicon devices. On the other hand, these and most other organic TFT's have an undesirably large subthreshold slope. We show here that the large subthreshold slope typically observed is not an intrinsic property of the organic semiconducting material and that devices with subthreshold slope similar to amorphous silicon devices are possible.",

author = "Lin, {Yen Yi} and Gundlach, {David J.} and Nelson, {Shelby F.} and Jackson, {Thomas N.}",

note = "Funding Information: Manuscript received October 4, 1996. The review of this paper was arranged by Editor A. Dodabalapur. This work was supported by the Defense Advanced Research Project Agency (DARPA) under Grant F33615-94-1-1464 and the National Science Foundation (NSF) under Grant ECS-9409444.",

year = "1997",

doi = "10.1109/16.605476",

language = "English (US)",

volume = "44",

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journal = "IEEE Transactions on Electron Devices",

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T1 - Pentacene-based organic thin-film transistors

AU - Lin, Yen Yi

AU - Gundlach, David J.

AU - Nelson, Shelby F.

AU - Jackson, Thomas N.

N1 - Funding Information: Manuscript received October 4, 1996. The review of this paper was arranged by Editor A. Dodabalapur. This work was supported by the Defense Advanced Research Project Agency (DARPA) under Grant F33615-94-1-1464 and the National Science Foundation (NSF) under Grant ECS-9409444.

PY - 1997

Y1 - 1997

N2 - Organic thin-film transistors using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active electronic material have shown mobility as large as 0.7 cm2/V-s and on/off current ratio larger than 108; both values are comparable to hydrogenated amorphous silicon devices. On the other hand, these and most other organic TFT's have an undesirably large subthreshold slope. We show here that the large subthreshold slope typically observed is not an intrinsic property of the organic semiconducting material and that devices with subthreshold slope similar to amorphous silicon devices are possible.

AB - Organic thin-film transistors using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active electronic material have shown mobility as large as 0.7 cm2/V-s and on/off current ratio larger than 108; both values are comparable to hydrogenated amorphous silicon devices. On the other hand, these and most other organic TFT's have an undesirably large subthreshold slope. We show here that the large subthreshold slope typically observed is not an intrinsic property of the organic semiconducting material and that devices with subthreshold slope similar to amorphous silicon devices are possible.

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Pentacene-based organic thin-film transistors

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