Pentacene organic thin-film transistors for circuit and display applications

Hagen Klauk; David J. Gundlach; Jonathan A. Nichols; Thomas N. Jackson

doi:10.1109/16.766895

Pentacene organic thin-film transistors for circuit and display applications

Hagen Klauk
, David J. Gundlach
, Jonathan A. Nichols
, Thomas N. Jackson

Research output: Contribution to journal › Article › peer-review

256 Scopus citations

Abstract

We have fabricated organic thin-film transistors (TFT's) using the small-molecule polycyclic aromatic hydrocarbon pentacene as the active material. Devices were fabricated on glass substrates using low-temperature ion-beam deposited silicon dioxide as the gate dielectric, ion-beam deposited palladium for the source and drain contacts, and vacuum-evaporated pentacene to form the active layer. Excellent electrical characteristics were obtained, including carrier mobility as large as 0.6 cm²/V-s, on/off current ratio as large as 10⁸, and subthreshold slope as low as 0.7 V/dec, all record values for organic transistors fabricated on nonsingle-crystal substrates.

Original language	English (US)
Pages (from-to)	1258-1263
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	46
Issue number	6
DOIs	https://doi.org/10.1109/16.766895
State	Published - 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.766895

Cite this

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title = "Pentacene organic thin-film transistors for circuit and display applications",

abstract = "We have fabricated organic thin-film transistors (TFT's) using the small-molecule polycyclic aromatic hydrocarbon pentacene as the active material. Devices were fabricated on glass substrates using low-temperature ion-beam deposited silicon dioxide as the gate dielectric, ion-beam deposited palladium for the source and drain contacts, and vacuum-evaporated pentacene to form the active layer. Excellent electrical characteristics were obtained, including carrier mobility as large as 0.6 cm2/V-s, on/off current ratio as large as 108, and subthreshold slope as low as 0.7 V/dec, all record values for organic transistors fabricated on nonsingle-crystal substrates.",

author = "Hagen Klauk and Gundlach, \{David J.\} and Nichols, \{Jonathan A.\} and Jackson, \{Thomas N.\}",

note = "Funding Information: Manuscript received November 4, 1998; revised February 12, 1999. The review of this paper was arranged by Editor J. N. Hollenhorst. This work was supported by Opticom ASA and the Defense Advanced Research Projects Agency (DARPA).",

year = "1999",

doi = "10.1109/16.766895",

language = "English (US)",

volume = "46",

pages = "1258--1263",

journal = "IEEE Transactions on Electron Devices",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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TY - JOUR

T1 - Pentacene organic thin-film transistors for circuit and display applications

AU - Klauk, Hagen

AU - Gundlach, David J.

AU - Nichols, Jonathan A.

AU - Jackson, Thomas N.

N1 - Funding Information: Manuscript received November 4, 1998; revised February 12, 1999. The review of this paper was arranged by Editor J. N. Hollenhorst. This work was supported by Opticom ASA and the Defense Advanced Research Projects Agency (DARPA).

PY - 1999

Y1 - 1999

N2 - We have fabricated organic thin-film transistors (TFT's) using the small-molecule polycyclic aromatic hydrocarbon pentacene as the active material. Devices were fabricated on glass substrates using low-temperature ion-beam deposited silicon dioxide as the gate dielectric, ion-beam deposited palladium for the source and drain contacts, and vacuum-evaporated pentacene to form the active layer. Excellent electrical characteristics were obtained, including carrier mobility as large as 0.6 cm2/V-s, on/off current ratio as large as 108, and subthreshold slope as low as 0.7 V/dec, all record values for organic transistors fabricated on nonsingle-crystal substrates.

AB - We have fabricated organic thin-film transistors (TFT's) using the small-molecule polycyclic aromatic hydrocarbon pentacene as the active material. Devices were fabricated on glass substrates using low-temperature ion-beam deposited silicon dioxide as the gate dielectric, ion-beam deposited palladium for the source and drain contacts, and vacuum-evaporated pentacene to form the active layer. Excellent electrical characteristics were obtained, including carrier mobility as large as 0.6 cm2/V-s, on/off current ratio as large as 108, and subthreshold slope as low as 0.7 V/dec, all record values for organic transistors fabricated on nonsingle-crystal substrates.

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -

Pentacene organic thin-film transistors for circuit and display applications

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