Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes

David J. Gundlach; Lili Jia; Thomas N. Jackson

doi:10.1109/55.974580

Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes

David J. Gundlach, Lili Jia, Thomas N. Jackson

Research output: Contribution to journal › Article › peer-review

212 Scopus citations

Abstract

Chemically modified source and drain contacts were used to fabricate organic thin film transistors (OTFT) with improved linear region characteristics. Heavily doped, thermally oxidized single crystal silicon with linear field-effect mobility greater than 0.5 cm ²/V-s was used as substrate for fabrication of OTFT. Analysis suggested that poor charge injection in OTFT active layers resulted in large discrepancy in field-effect mobility of the two regions of the device.

Original language	English (US)
Pages (from-to)	571-573
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	12
DOIs	https://doi.org/10.1109/55.974580
State	Published - Dec 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.974580

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title = "Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes",

abstract = "Chemically modified source and drain contacts were used to fabricate organic thin film transistors (OTFT) with improved linear region characteristics. Heavily doped, thermally oxidized single crystal silicon with linear field-effect mobility greater than 0.5 cm 2/V-s was used as substrate for fabrication of OTFT. Analysis suggested that poor charge injection in OTFT active layers resulted in large discrepancy in field-effect mobility of the two regions of the device.",

author = "Gundlach, {David J.} and Lili Jia and Jackson, {Thomas N.}",

note = "Funding Information: Manuscript received November 22, 2000; revised April 12, 2001. This work was supported by Naval Surface Warface Center, Dahlgren Division, Airforce Wright Laboratory, Sarnoff and the Defense Advanced Research Projects Agency. The review of this letter was arranged by Editor J. Sin.",

year = "2001",

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doi = "10.1109/55.974580",

language = "English (US)",

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T1 - Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes

AU - Gundlach, David J.

AU - Jia, Lili

AU - Jackson, Thomas N.

N1 - Funding Information: Manuscript received November 22, 2000; revised April 12, 2001. This work was supported by Naval Surface Warface Center, Dahlgren Division, Airforce Wright Laboratory, Sarnoff and the Defense Advanced Research Projects Agency. The review of this letter was arranged by Editor J. Sin.

PY - 2001/12

Y1 - 2001/12

N2 - Chemically modified source and drain contacts were used to fabricate organic thin film transistors (OTFT) with improved linear region characteristics. Heavily doped, thermally oxidized single crystal silicon with linear field-effect mobility greater than 0.5 cm 2/V-s was used as substrate for fabrication of OTFT. Analysis suggested that poor charge injection in OTFT active layers resulted in large discrepancy in field-effect mobility of the two regions of the device.

AB - Chemically modified source and drain contacts were used to fabricate organic thin film transistors (OTFT) with improved linear region characteristics. Heavily doped, thermally oxidized single crystal silicon with linear field-effect mobility greater than 0.5 cm 2/V-s was used as substrate for fabrication of OTFT. Analysis suggested that poor charge injection in OTFT active layers resulted in large discrepancy in field-effect mobility of the two regions of the device.

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JF - IEEE Electron Device Letters

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ER -

Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes

Abstract

All Science Journal Classification (ASJC) codes

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