Pentacene thin film transistors and inverter circuits

Hagen Klauk; Yen Yi Lin; David J. Gundlach; Thomas Nelson Jackson

Pentacene thin film transistors and inverter circuits

Hagen Klauk, Yen Yi Lin, David J. Gundlach, Thomas Nelson Jackson

Research output: Contribution to journal › Conference article › peer-review

Abstract

Organic thin film transistors and simple electronic circuits have been fabricated using the fused-ring small-molecule aromatic hydrocarbon pentacene as the active material. Carrier field-effect mobilities greater than 0.2 cm²/V-s were obtained for pentacene thin film transistors fabricated on glass substrates using low-temperature ion-beam deposited silicon dioxide as the gate dielectric and thermally evaporated pentacene as the active material. Using similar transistors, integrated voltage inverters with voltage gain large enough to be useful for the fabrication of electronic circuits have been fabricated.

Original language	English (US)
Pages (from-to)	539-542
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
State	Published - 1997
Event	1997 International Electron Devices Meeting - Washington, DC, USA Duration: Dec 7 1997 → Dec 10 1997

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Cite this

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title = "Pentacene thin film transistors and inverter circuits",

abstract = "Organic thin film transistors and simple electronic circuits have been fabricated using the fused-ring small-molecule aromatic hydrocarbon pentacene as the active material. Carrier field-effect mobilities greater than 0.2 cm2/V-s were obtained for pentacene thin film transistors fabricated on glass substrates using low-temperature ion-beam deposited silicon dioxide as the gate dielectric and thermally evaporated pentacene as the active material. Using similar transistors, integrated voltage inverters with voltage gain large enough to be useful for the fabrication of electronic circuits have been fabricated.",

author = "Hagen Klauk and Lin, {Yen Yi} and Gundlach, {David J.} and Jackson, {Thomas Nelson}",

year = "1997",

language = "English (US)",

pages = "539--542",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1997 International Electron Devices Meeting ; Conference date: 07-12-1997 Through 10-12-1997",

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TY - JOUR

T1 - Pentacene thin film transistors and inverter circuits

AU - Klauk, Hagen

AU - Lin, Yen Yi

AU - Gundlach, David J.

AU - Jackson, Thomas Nelson

PY - 1997

Y1 - 1997

N2 - Organic thin film transistors and simple electronic circuits have been fabricated using the fused-ring small-molecule aromatic hydrocarbon pentacene as the active material. Carrier field-effect mobilities greater than 0.2 cm2/V-s were obtained for pentacene thin film transistors fabricated on glass substrates using low-temperature ion-beam deposited silicon dioxide as the gate dielectric and thermally evaporated pentacene as the active material. Using similar transistors, integrated voltage inverters with voltage gain large enough to be useful for the fabrication of electronic circuits have been fabricated.

AB - Organic thin film transistors and simple electronic circuits have been fabricated using the fused-ring small-molecule aromatic hydrocarbon pentacene as the active material. Carrier field-effect mobilities greater than 0.2 cm2/V-s were obtained for pentacene thin film transistors fabricated on glass substrates using low-temperature ion-beam deposited silicon dioxide as the gate dielectric and thermally evaporated pentacene as the active material. Using similar transistors, integrated voltage inverters with voltage gain large enough to be useful for the fabrication of electronic circuits have been fabricated.

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M3 - Conference article

AN - SCOPUS:3843073265

SN - 0163-1918

SP - 539

EP - 542

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - 1997 International Electron Devices Meeting

Y2 - 7 December 1997 through 10 December 1997

ER -

Pentacene thin film transistors and inverter circuits

Abstract

All Science Journal Classification (ASJC) codes

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