Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling

Sokrates T. Pantelides; L. Tsetseris; M. J. Beck; S. N. Rashkeev; G. Hadjisavvas; I. G. Batyrev; B. R. Tuttle; A. G. Marinopoulos; X. J. Zhou; D. M. Fleetwood; R. D. Schrimpf

doi:10.1109/ESSCIRC.2009.5325931

Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling

Sokrates T. Pantelides, L. Tsetseris, M. J. Beck, S. N. Rashkeev, G. Hadjisavvas, I. G. Batyrev, B. R. Tuttle, A. G. Marinopoulos, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO₂ interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as Negative Bias Temperature Instability (NBTI) and radiation effects, such as Enhanced Low Dose Radiation Sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO₂. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO₂ band gap.

Original language	English (US)
Title of host publication	ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference
Pages	76-83
Number of pages	8
DOIs	https://doi.org/10.1109/ESSCIRC.2009.5325931
State	Published - 2009
Event	35th European Solid-State Circuits Conference, ESSCIRC 2009 - Athens, Greece Duration: Sep 14 2009 → Sep 18 2009

Publication series

Name	ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference

Other

Other	35th European Solid-State Circuits Conference, ESSCIRC 2009
Country/Territory	Greece
City	Athens
Period	9/14/09 → 9/18/09

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ESSCIRC.2009.5325931

Cite this

Pantelides, S. T., Tsetseris, L., Beck, M. J., Rashkeev, S. N., Hadjisavvas, G., Batyrev, I. G., Tuttle, B. R., Marinopoulos, A. G., Zhou, X. J., Fleetwood, D. M., & Schrimpf, R. D. (2009). Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. In ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference (pp. 76-83). Article 5325931 (ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference). https://doi.org/10.1109/ESSCIRC.2009.5325931

Pantelides, Sokrates T. ; Tsetseris, L. ; Beck, M. J. et al. / Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference. 2009. pp. 76-83 (ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference).

@inproceedings{ee590ab7b5b546f9bfd0d8d354a1eee0,

title = "Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling",

abstract = "The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as Negative Bias Temperature Instability (NBTI) and radiation effects, such as Enhanced Low Dose Radiation Sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.",

author = "Pantelides, {Sokrates T.} and L. Tsetseris and Beck, {M. J.} and Rashkeev, {S. N.} and G. Hadjisavvas and Batyrev, {I. G.} and Tuttle, {B. R.} and Marinopoulos, {A. G.} and Zhou, {X. J.} and Fleetwood, {D. M.} and Schrimpf, {R. D.}",

year = "2009",

doi = "10.1109/ESSCIRC.2009.5325931",

language = "English (US)",

isbn = "9781424443536",

series = "ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference",

pages = "76--83",

booktitle = "ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference",

note = "35th European Solid-State Circuits Conference, ESSCIRC 2009 ; Conference date: 14-09-2009 Through 18-09-2009",

}

Pantelides, ST, Tsetseris, L, Beck, MJ, Rashkeev, SN, Hadjisavvas, G, Batyrev, IG, Tuttle, BR, Marinopoulos, AG, Zhou, XJ, Fleetwood, DM & Schrimpf, RD 2009, Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. in ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference., 5325931, ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference, pp. 76-83, 35th European Solid-State Circuits Conference, ESSCIRC 2009, Athens, Greece, 9/14/09. https://doi.org/10.1109/ESSCIRC.2009.5325931

Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. / Pantelides, Sokrates T.; Tsetseris, L.; Beck, M. J. et al.
ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference. 2009. p. 76-83 5325931 (ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Pantelides, Sokrates T.

AU - Tsetseris, L.

AU - Beck, M. J.

AU - Rashkeev, S. N.

AU - Hadjisavvas, G.

AU - Batyrev, I. G.

AU - Tuttle, B. R.

AU - Marinopoulos, A. G.

AU - Zhou, X. J.

AU - Fleetwood, D. M.

AU - Schrimpf, R. D.

PY - 2009

Y1 - 2009

N2 - The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as Negative Bias Temperature Instability (NBTI) and radiation effects, such as Enhanced Low Dose Radiation Sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.

AB - The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as Negative Bias Temperature Instability (NBTI) and radiation effects, such as Enhanced Low Dose Radiation Sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.

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M3 - Conference contribution

AN - SCOPUS:72849144825

SN - 9781424443536

T3 - ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference

SP - 76

EP - 83

BT - ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference

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Y2 - 14 September 2009 through 18 September 2009

ER -

Pantelides ST, Tsetseris L, Beck MJ, Rashkeev SN, Hadjisavvas G, Batyrev IG et al. Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. In ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference. 2009. p. 76-83. 5325931. (ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference). doi: 10.1109/ESSCIRC.2009.5325931

Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling

Abstract

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