Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling

Keyphrases

• Engineering Level 100%
• Radiation Effects 100%
• Microelectronics 100%
• Performance Reliability 100%
• Atomic Scale 100%
• Silica 66%
• Physical Mechanism 66%
• Low-dose Radiation 33%
• Parameter-free 33%
• Band Gap 33%
• Electron Mobility 33%
• Strain-induced 33%
• Si-SiO2 Interface 33%
• Atomic Simulation 33%
• Scale Model 33%
• Radiation Sensitivity 33%
• Temperature Radiation 33%
• Level Model 33%
• Negative Bias Temperature Instability 33%
• Quantum Mechanical Calculations 33%
• Energy Levels 33%
• Energetic Ions 33%
• Natural Explanations 33%
• Dopant Activation 33%
• Instability Effects 33%
• Single-event Gate Rupture 33%

Engineering

• Engineering 100%
• Microelectronics 100%
• Radiation Effect 100%
• Review Paper 33%
• Defects 33%
• Energy Gap 33%
• Level Model 33%
• Scale Model 33%
• Negative-Bias Temperature Instability 33%
• Dopants 33%
• Energetic Ion 33%
• Free Parameter 33%

Material Science

• Doping (Additives) 100%
• Electron Mobility 100%
• Negative-Bias Temperature Instability 100%