Abstract
The possibility is explored of obtaining an analytical solution for the minority carrier distribution in a grain under illumination. The goal is to be able to analytically undertake performance study of p** plus /n and n** plus /p solar cell structures on polycrystalline material. It is shown that an analytical solution can be obtained in terms of Fourier and Fourier-Bessel series for a columnar grain under very general conditions. These conditions allow for grain boundary penetration from the top of a variable depth, grain boundary penetration from the bottom of a variable depth, and an arbitrary degree of passivation in the remainder of the grain boundary.
Original language | English (US) |
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Pages (from-to) | 82-85 |
Number of pages | 4 |
Journal | Conference Record of the IEEE Photovoltaic Specialists Conference |
State | Published - 1980 |
Event | Conf Rec IEEE Photovoltaic Spec Conf 14th - San Diego, CA, USA Duration: Jan 7 1980 → Jan 10 1980 |
All Science Journal Classification (ASJC) codes
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering