Permanent ferroelectric retention of BiFeO3 mesocrystal

Ying Hui Hsieh; Fei Xue; Tiannan Yang; Heng Jui Liu; Yuanmin Zhu; Yi Chun Chen; Qian Zhan; Chun Gang Duan; Long Qing Chen; Qing He; Ying Hao Chu

doi:10.1038/ncomms13199

Permanent ferroelectric retention of BiFeO₃ mesocrystal

Ying Hui Hsieh, Fei Xue, Tiannan Yang, Heng Jui Liu, Yuanmin Zhu, Yi Chun Chen, Qian Zhan, Chun Gang Duan, Long Qing Chen, Qing He, Ying Hao Chu

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention and fatigue, must be solved before the realization of practical devices. In this study, everlasting ferroelectric retention in the heteroepitaxially constrained multiferroic mesocrystal is reported, suggesting a new approach to overcome the failure of ferroelectric retention. Studied by scanning probe microscopy and transmission electron microscopy, and supported via the phase-field simulations, the key to the success of ferroelectric retention is to prevent the crystal from ferroelastic deformation during the relaxation of the spontaneous polarization in a ferroelectric nanocrystal.

Original language	English (US)
Article number	13199
Journal	Nature communications
Volume	7
DOIs	https://doi.org/10.1038/ncomms13199
State	Published - Oct 26 2016

All Science Journal Classification (ASJC) codes

Chemistry(all)
Biochemistry, Genetics and Molecular Biology(all)
Physics and Astronomy(all)

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10.1038/ncomms13199

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title = "Permanent ferroelectric retention of BiFeO3 mesocrystal",

abstract = "Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention and fatigue, must be solved before the realization of practical devices. In this study, everlasting ferroelectric retention in the heteroepitaxially constrained multiferroic mesocrystal is reported, suggesting a new approach to overcome the failure of ferroelectric retention. Studied by scanning probe microscopy and transmission electron microscopy, and supported via the phase-field simulations, the key to the success of ferroelectric retention is to prevent the crystal from ferroelastic deformation during the relaxation of the spontaneous polarization in a ferroelectric nanocrystal.",

author = "Hsieh, {Ying Hui} and Fei Xue and Tiannan Yang and Liu, {Heng Jui} and Yuanmin Zhu and Chen, {Yi Chun} and Qian Zhan and Duan, {Chun Gang} and Chen, {Long Qing} and Qing He and Chu, {Ying Hao}",

note = "Funding Information: The work at Durham University is supported by Engineering and Physical Sciences Research Council with Grant No. EP/N016718/1. Publisher Copyright: {\textcopyright} 2016 The Author(s).",

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doi = "10.1038/ncomms13199",

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T1 - Permanent ferroelectric retention of BiFeO3 mesocrystal

AU - Hsieh, Ying Hui

AU - Xue, Fei

AU - Yang, Tiannan

AU - Liu, Heng Jui

AU - Zhu, Yuanmin

AU - Chen, Yi Chun

AU - Zhan, Qian

AU - Duan, Chun Gang

AU - Chen, Long Qing

AU - He, Qing

AU - Chu, Ying Hao

PY - 2016/10/26

Y1 - 2016/10/26

N2 - Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention and fatigue, must be solved before the realization of practical devices. In this study, everlasting ferroelectric retention in the heteroepitaxially constrained multiferroic mesocrystal is reported, suggesting a new approach to overcome the failure of ferroelectric retention. Studied by scanning probe microscopy and transmission electron microscopy, and supported via the phase-field simulations, the key to the success of ferroelectric retention is to prevent the crystal from ferroelastic deformation during the relaxation of the spontaneous polarization in a ferroelectric nanocrystal.

AB - Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention and fatigue, must be solved before the realization of practical devices. In this study, everlasting ferroelectric retention in the heteroepitaxially constrained multiferroic mesocrystal is reported, suggesting a new approach to overcome the failure of ferroelectric retention. Studied by scanning probe microscopy and transmission electron microscopy, and supported via the phase-field simulations, the key to the success of ferroelectric retention is to prevent the crystal from ferroelastic deformation during the relaxation of the spontaneous polarization in a ferroelectric nanocrystal.

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Permanent ferroelectric retention of BiFeO₃ mesocrystal

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