Persistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctions

M. I. Nathan; T. N. Jackson; P. D. Kirchner; E. E. Mendez; G. D. Pettit; J. M. Woodall

doi:10.1007/BF02676799

Persistent photo-conductance and photoquenching of selectively doped Al_0.3Ga_0.7As GaAs/heterojunctions

M. I. Nathan, T. N. Jackson, P. D. Kirchner, E. E. Mendez, G. D. Pettit, J. M. Woodall

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23 Scopus citations

Abstract

The dependence on photon energy of the persistent photoconductivity (PPC) in selectively doped high mobility Al_0.3Ga_0.7As-GaAs heterostructures has been measured at temperatures below 80 K. A decrease in conductivity due to light exposure at one wavelength after exposure to light at another wavelength - photo-quenching - is also found. It is concluded that deep centers in GaAs and AlGaAs other than the DX center in AlGaAs are mainly responsible for PPC.

Original language	English (US)
Pages (from-to)	719-725
Number of pages	7
Journal	Journal of Electronic Materials
Volume	12
Issue number	4
DOIs	https://doi.org/10.1007/BF02676799
State	Published - Jul 1 1983

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Persistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctions",

abstract = "The dependence on photon energy of the persistent photoconductivity (PPC) in selectively doped high mobility Al0.3Ga0.7As-GaAs heterostructures has been measured at temperatures below 80 K. A decrease in conductivity due to light exposure at one wavelength after exposure to light at another wavelength - photo-quenching - is also found. It is concluded that deep centers in GaAs and AlGaAs other than the DX center in AlGaAs are mainly responsible for PPC.",

author = "Nathan, {M. I.} and Jackson, {T. N.} and Kirchner, {P. D.} and Mendez, {E. E.} and Pettit, {G. D.} and Woodall, {J. M.}",

year = "1983",

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doi = "10.1007/BF02676799",

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T1 - Persistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctions

AU - Nathan, M. I.

AU - Jackson, T. N.

AU - Kirchner, P. D.

AU - Mendez, E. E.

AU - Pettit, G. D.

AU - Woodall, J. M.

PY - 1983/7/1

Y1 - 1983/7/1

N2 - The dependence on photon energy of the persistent photoconductivity (PPC) in selectively doped high mobility Al0.3Ga0.7As-GaAs heterostructures has been measured at temperatures below 80 K. A decrease in conductivity due to light exposure at one wavelength after exposure to light at another wavelength - photo-quenching - is also found. It is concluded that deep centers in GaAs and AlGaAs other than the DX center in AlGaAs are mainly responsible for PPC.

AB - The dependence on photon energy of the persistent photoconductivity (PPC) in selectively doped high mobility Al0.3Ga0.7As-GaAs heterostructures has been measured at temperatures below 80 K. A decrease in conductivity due to light exposure at one wavelength after exposure to light at another wavelength - photo-quenching - is also found. It is concluded that deep centers in GaAs and AlGaAs other than the DX center in AlGaAs are mainly responsible for PPC.

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 4

ER -

Persistent photo-conductance and photoquenching of selectively doped Al_0.3Ga_0.7As GaAs/heterojunctions

Abstract

All Science Journal Classification (ASJC) codes

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