The dependence on photon energy of the persistent photoconductivity (PPC) in selectively doped high mobility Al0.3Ga0.7As-GaAs heterostructures has been measured at temperatures below 80 K. A decrease in conductivity due to light exposure at one wavelength after exposure to light at another wavelength - photo-quenching - is also found. It is concluded that deep centers in GaAs and AlGaAs other than the DX center in AlGaAs are mainly responsible for PPC.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry