PH-controlled selective etching of Al2O3 over ZnO

Kaige G. Sun; Yuanyuan V. Li; David B. Saint John; Thomas N. Jackson

doi:10.1021/am501912q

PH-controlled selective etching of Al₂O₃ over ZnO

Kaige G. Sun, Yuanyuan V. Li, David B. Saint John, Thomas N. Jackson

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

We describe pH-controlled selective etching of atomic layer deposition (ALD) Al₂O₃ over ZnO. Film thickness as a function of etch exposure was measured by spectroscopic ellipsometry. We find that alkaline aqueous solutions with pH between about 9 and 12 will etch Al₂O ₃ at useful rate with minimal attack of ZnO. Highly selective etching of Al₂O₃ over ZnO (selectivity >400:1) and an Al ₂O₃ etch rate of ∼50 nm/min can be obtained using a pH 12 etch solution at 60 °C.

Original language	English (US)
Pages (from-to)	7028-7031
Number of pages	4
Journal	ACS Applied Materials and Interfaces
Volume	6
Issue number	10
DOIs	https://doi.org/10.1021/am501912q
State	Published - May 28 2014

All Science Journal Classification (ASJC) codes

General Materials Science

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10.1021/am501912q

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title = "PH-controlled selective etching of Al2O3 over ZnO",

abstract = "We describe pH-controlled selective etching of atomic layer deposition (ALD) Al2O3 over ZnO. Film thickness as a function of etch exposure was measured by spectroscopic ellipsometry. We find that alkaline aqueous solutions with pH between about 9 and 12 will etch Al2O 3 at useful rate with minimal attack of ZnO. Highly selective etching of Al2O3 over ZnO (selectivity >400:1) and an Al 2O3 etch rate of ∼50 nm/min can be obtained using a pH 12 etch solution at 60 °C.",

author = "Sun, {Kaige G.} and Li, {Yuanyuan V.} and {Saint John}, {David B.} and Jackson, {Thomas N.}",

year = "2014",

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language = "English (US)",

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pages = "7028--7031",

journal = "ACS Applied Materials and Interfaces",

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T1 - PH-controlled selective etching of Al2O3 over ZnO

AU - Sun, Kaige G.

AU - Li, Yuanyuan V.

AU - Saint John, David B.

AU - Jackson, Thomas N.

PY - 2014/5/28

Y1 - 2014/5/28

N2 - We describe pH-controlled selective etching of atomic layer deposition (ALD) Al2O3 over ZnO. Film thickness as a function of etch exposure was measured by spectroscopic ellipsometry. We find that alkaline aqueous solutions with pH between about 9 and 12 will etch Al2O 3 at useful rate with minimal attack of ZnO. Highly selective etching of Al2O3 over ZnO (selectivity >400:1) and an Al 2O3 etch rate of ∼50 nm/min can be obtained using a pH 12 etch solution at 60 °C.

AB - We describe pH-controlled selective etching of atomic layer deposition (ALD) Al2O3 over ZnO. Film thickness as a function of etch exposure was measured by spectroscopic ellipsometry. We find that alkaline aqueous solutions with pH between about 9 and 12 will etch Al2O 3 at useful rate with minimal attack of ZnO. Highly selective etching of Al2O3 over ZnO (selectivity >400:1) and an Al 2O3 etch rate of ∼50 nm/min can be obtained using a pH 12 etch solution at 60 °C.

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JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 10

ER -

PH-controlled selective etching of Al₂O₃ over ZnO

Abstract

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