Phase Control of RF Sputtered SnSx with Post-Deposition Annealing for a Pseudo-Homojunction Photovoltaic Device

J. R. Nasr; J. J. Cordell; R. L. Gurunathan; J. R.S. Brownson; M. W. Horn

doi:10.1007/s11664-016-5096-y

Phase Control of RF Sputtered SnS_x with Post-Deposition Annealing for a Pseudo-Homojunction Photovoltaic Device

J. R. Nasr, J. J. Cordell, R. L. Gurunathan, J. R.S. Brownson, M. W. Horn

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Tin (II) Monosufide (SnS) is an interesting material for thin film photovoltaics. n- and p-type sputter-deposited SnS_x have been investigated for use in a homojunction photovoltaic device. Post-deposition vacuum heat treatment of as-deposited amorphous films was found to produce n-type SnS_x and p-type SnS depending upon in situ vacuum anneal time and temperature. Annealing temperatures varied from 300°C to 400°C at durations from 20 min to 60 min under high vacuum. Results show clear photoresponse for both n-type and p-type using Pd contacts.

Original language	English (US)
Pages (from-to)	1215-1222
Number of pages	8
Journal	Journal of Electronic Materials
Volume	46
Issue number	2
DOIs	https://doi.org/10.1007/s11664-016-5096-y
State	Published - Feb 1 2017

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1007/s11664-016-5096-y

Cite this

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title = "Phase Control of RF Sputtered SnSx with Post-Deposition Annealing for a Pseudo-Homojunction Photovoltaic Device",

abstract = "Tin (II) Monosufide (SnS) is an interesting material for thin film photovoltaics. n- and p-type sputter-deposited SnSx have been investigated for use in a homojunction photovoltaic device. Post-deposition vacuum heat treatment of as-deposited amorphous films was found to produce n-type SnSx and p-type SnS depending upon in situ vacuum anneal time and temperature. Annealing temperatures varied from 300°C to 400°C at durations from 20 min to 60 min under high vacuum. Results show clear photoresponse for both n-type and p-type using Pd contacts.",

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AU - Cordell, J. J.

AU - Gurunathan, R. L.

AU - Brownson, J. R.S.

AU - Horn, M. W.

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AB - Tin (II) Monosufide (SnS) is an interesting material for thin film photovoltaics. n- and p-type sputter-deposited SnSx have been investigated for use in a homojunction photovoltaic device. Post-deposition vacuum heat treatment of as-deposited amorphous films was found to produce n-type SnSx and p-type SnS depending upon in situ vacuum anneal time and temperature. Annealing temperatures varied from 300°C to 400°C at durations from 20 min to 60 min under high vacuum. Results show clear photoresponse for both n-type and p-type using Pd contacts.

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