TY - JOUR
T1 - Phase development in pulsed laser deposited Pb[Yb1/2Nb1/2]O3-PbTiO3 thin films
AU - Bornand, V.
AU - Trolier-Mckinstry, S.
N1 - Funding Information:
The authors wish to thank B. Jones and M. Angelone for their technical support (target preparation and texture characterization, respectively). This work has been supported by the Office of Naval Research (US) under the project number N00014-98-1-0527. One of the author (V.B.) also acknowledges the DRET/DGA (France) for its financial support under the grant No. 93811113.
PY - 2000/7/17
Y1 - 2000/7/17
N2 - (1 - x) Pb[Yb1/2Nb1/2]O3-x PbTiO3 (PYbN-PT, x = 0.4 and 0.5)/SrRuO3 (SRO) heterostructures have been prepared by pulsed laser deposition (PLD) on 〈100〉pc-oriented LaAlO3 (LAO) substrates (the subscript pc refers here to the pseudo-cubic perovskite subscell). Careful control of both lead volatilization and pyrochlore formation during the growth appears to be essential to obtain perovskite PYbN-PT thin films with good crystalline, electrical and ferroelectric properties. By utilizing PbO-enriched ceramic targets and adjusting deposition parameters such as the laser frequency, the chamber pressure, the target to substrate distance and/or the substrate temperature, high-quality thin films can be successfully grown with a single out-of-plane 〈001〉pc orientation and an in-plane heteroepitaxial arrangement of [110]pc PYbN-PT//[110]pc. SrRuO3. When processed in the 560-660°C temperature range, with a dynamic O3/O2 pressure of 300-400 mTorr and relatively high laser repetition rates, PYbN-PT films exhibit improved ferroelectric properties. The typical values of the remanent (Pr) and saturation (Ps) polarizations increase up to 50 and 80 μC/cm2, respectively.
AB - (1 - x) Pb[Yb1/2Nb1/2]O3-x PbTiO3 (PYbN-PT, x = 0.4 and 0.5)/SrRuO3 (SRO) heterostructures have been prepared by pulsed laser deposition (PLD) on 〈100〉pc-oriented LaAlO3 (LAO) substrates (the subscript pc refers here to the pseudo-cubic perovskite subscell). Careful control of both lead volatilization and pyrochlore formation during the growth appears to be essential to obtain perovskite PYbN-PT thin films with good crystalline, electrical and ferroelectric properties. By utilizing PbO-enriched ceramic targets and adjusting deposition parameters such as the laser frequency, the chamber pressure, the target to substrate distance and/or the substrate temperature, high-quality thin films can be successfully grown with a single out-of-plane 〈001〉pc orientation and an in-plane heteroepitaxial arrangement of [110]pc PYbN-PT//[110]pc. SrRuO3. When processed in the 560-660°C temperature range, with a dynamic O3/O2 pressure of 300-400 mTorr and relatively high laser repetition rates, PYbN-PT films exhibit improved ferroelectric properties. The typical values of the remanent (Pr) and saturation (Ps) polarizations increase up to 50 and 80 μC/cm2, respectively.
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U2 - 10.1016/S0040-6090(00)00928-7
DO - 10.1016/S0040-6090(00)00928-7
M3 - Article
AN - SCOPUS:0033719877
SN - 0040-6090
VL - 370
SP - 70
EP - 77
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1
ER -