Phase development in pulsed laser deposited Pb[Yb1/2Nb1/2]O3-PbTiO3 thin films

V. Bornand; S. Trolier-Mckinstry

doi:10.1016/S0040-6090(00)00928-7

Phase development in pulsed laser deposited Pb[Yb_1/2Nb_1/2]O₃-PbTiO₃ thin films

V. Bornand
, S. Trolier-Mckinstry

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

(1 - x) Pb[Yb_1/2Nb_1/2]O₃-x PbTiO₃ (PYbN-PT, x = 0.4 and 0.5)/SrRuO₃ (SRO) heterostructures have been prepared by pulsed laser deposition (PLD) on 〈100〉_pc-oriented LaAlO₃ (LAO) substrates (the subscript pc refers here to the pseudo-cubic perovskite subscell). Careful control of both lead volatilization and pyrochlore formation during the growth appears to be essential to obtain perovskite PYbN-PT thin films with good crystalline, electrical and ferroelectric properties. By utilizing PbO-enriched ceramic targets and adjusting deposition parameters such as the laser frequency, the chamber pressure, the target to substrate distance and/or the substrate temperature, high-quality thin films can be successfully grown with a single out-of-plane 〈001〉_pc orientation and an in-plane heteroepitaxial arrangement of [110]_pc PYbN-PT//[110]_pc. SrRuO₃. When processed in the 560-660°C temperature range, with a dynamic O₃/O₂ pressure of 300-400 mTorr and relatively high laser repetition rates, PYbN-PT films exhibit improved ferroelectric properties. The typical values of the remanent (P_r) and saturation (P_s) polarizations increase up to 50 and 80 μC/cm², respectively.

Original language	English (US)
Pages (from-to)	70-77
Number of pages	8
Journal	Thin Solid Films
Volume	370
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(00)00928-7
State	Published - Jul 17 2000

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(00)00928-7

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@article{5b43e58656f048dd961061e07b30ff0c,

title = "Phase development in pulsed laser deposited Pb[Yb1/2Nb1/2]O3-PbTiO3 thin films",

abstract = "(1 - x) Pb[Yb1/2Nb1/2]O3-x PbTiO3 (PYbN-PT, x = 0.4 and 0.5)/SrRuO3 (SRO) heterostructures have been prepared by pulsed laser deposition (PLD) on 〈100〉pc-oriented LaAlO3 (LAO) substrates (the subscript pc refers here to the pseudo-cubic perovskite subscell). Careful control of both lead volatilization and pyrochlore formation during the growth appears to be essential to obtain perovskite PYbN-PT thin films with good crystalline, electrical and ferroelectric properties. By utilizing PbO-enriched ceramic targets and adjusting deposition parameters such as the laser frequency, the chamber pressure, the target to substrate distance and/or the substrate temperature, high-quality thin films can be successfully grown with a single out-of-plane 〈001〉pc orientation and an in-plane heteroepitaxial arrangement of [110]pc PYbN-PT//[110]pc. SrRuO3. When processed in the 560-660°C temperature range, with a dynamic O3/O2 pressure of 300-400 mTorr and relatively high laser repetition rates, PYbN-PT films exhibit improved ferroelectric properties. The typical values of the remanent (Pr) and saturation (Ps) polarizations increase up to 50 and 80 μC/cm2, respectively.",

author = "V. Bornand and S. Trolier-Mckinstry",

note = "Funding Information: The authors wish to thank B. Jones and M. Angelone for their technical support (target preparation and texture characterization, respectively). This work has been supported by the Office of Naval Research (US) under the project number N00014-98-1-0527. One of the author (V.B.) also acknowledges the DRET/DGA (France) for its financial support under the grant No. 93811113.",

year = "2000",

month = jul,

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doi = "10.1016/S0040-6090(00)00928-7",

language = "English (US)",

volume = "370",

pages = "70--77",

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publisher = "Elsevier B.V.",

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T1 - Phase development in pulsed laser deposited Pb[Yb1/2Nb1/2]O3-PbTiO3 thin films

AU - Bornand, V.

AU - Trolier-Mckinstry, S.

N1 - Funding Information: The authors wish to thank B. Jones and M. Angelone for their technical support (target preparation and texture characterization, respectively). This work has been supported by the Office of Naval Research (US) under the project number N00014-98-1-0527. One of the author (V.B.) also acknowledges the DRET/DGA (France) for its financial support under the grant No. 93811113.

PY - 2000/7/17

Y1 - 2000/7/17

N2 - (1 - x) Pb[Yb1/2Nb1/2]O3-x PbTiO3 (PYbN-PT, x = 0.4 and 0.5)/SrRuO3 (SRO) heterostructures have been prepared by pulsed laser deposition (PLD) on 〈100〉pc-oriented LaAlO3 (LAO) substrates (the subscript pc refers here to the pseudo-cubic perovskite subscell). Careful control of both lead volatilization and pyrochlore formation during the growth appears to be essential to obtain perovskite PYbN-PT thin films with good crystalline, electrical and ferroelectric properties. By utilizing PbO-enriched ceramic targets and adjusting deposition parameters such as the laser frequency, the chamber pressure, the target to substrate distance and/or the substrate temperature, high-quality thin films can be successfully grown with a single out-of-plane 〈001〉pc orientation and an in-plane heteroepitaxial arrangement of [110]pc PYbN-PT//[110]pc. SrRuO3. When processed in the 560-660°C temperature range, with a dynamic O3/O2 pressure of 300-400 mTorr and relatively high laser repetition rates, PYbN-PT films exhibit improved ferroelectric properties. The typical values of the remanent (Pr) and saturation (Ps) polarizations increase up to 50 and 80 μC/cm2, respectively.

AB - (1 - x) Pb[Yb1/2Nb1/2]O3-x PbTiO3 (PYbN-PT, x = 0.4 and 0.5)/SrRuO3 (SRO) heterostructures have been prepared by pulsed laser deposition (PLD) on 〈100〉pc-oriented LaAlO3 (LAO) substrates (the subscript pc refers here to the pseudo-cubic perovskite subscell). Careful control of both lead volatilization and pyrochlore formation during the growth appears to be essential to obtain perovskite PYbN-PT thin films with good crystalline, electrical and ferroelectric properties. By utilizing PbO-enriched ceramic targets and adjusting deposition parameters such as the laser frequency, the chamber pressure, the target to substrate distance and/or the substrate temperature, high-quality thin films can be successfully grown with a single out-of-plane 〈001〉pc orientation and an in-plane heteroepitaxial arrangement of [110]pc PYbN-PT//[110]pc. SrRuO3. When processed in the 560-660°C temperature range, with a dynamic O3/O2 pressure of 300-400 mTorr and relatively high laser repetition rates, PYbN-PT films exhibit improved ferroelectric properties. The typical values of the remanent (Pr) and saturation (Ps) polarizations increase up to 50 and 80 μC/cm2, respectively.

UR - https://www.scopus.com/pages/publications/0033719877

UR - https://www.scopus.com/pages/publications/0033719877#tab=citedBy

U2 - 10.1016/S0040-6090(00)00928-7

DO - 10.1016/S0040-6090(00)00928-7

M3 - Article

AN - SCOPUS:0033719877

SN - 0040-6090

VL - 370

SP - 70

EP - 77

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Phase development in pulsed laser deposited Pb[Yb_1/2Nb_1/2]O₃-PbTiO₃ thin films

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