Abstract
Phase equilibria at 700 °C in the GaAs-rich portion of the Pt-Ti-Ga-As system and the InAs-rich portion of the Pt-Ti-In-As system have been investigated. These studies were undertaken to provide a better understanding of the metallurgy of contacts that contain both Pt and Ti on the semiconductors GaAs and InAs. The phases present in equilibrated samples were characterized through X-ray diffraction and in some cases electron probe microanalysis. This study reveals a tendency for Ti to form TiAs and Pt to form gallides (indides) in thermodynamic equilibrium with GaAs (InAs) over a wide range of Pt : Ti ratios. Thermodynamic stability of the semiconductor PtAs2, which could play a role in the electrical characteristics of Ti/Pt/III-As contacts, occurs when the Pt : Ti ratio exceeds 1 : 1 (1 : 2) on GaAs (InAs).
| Original language | English (US) |
|---|---|
| Pages (from-to) | 357-360 |
| Number of pages | 4 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 9 |
| Issue number | 5 |
| DOIs | |
| State | Published - Oct 1998 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering